Datasheet 4N10 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	4N10	N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 4N10 ·FEATURES ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,converte	Inchange Semiconductor	mosfet
2	4N100	N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 4N100 Preliminary 4A, 1000V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N100 is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and high breakdown voltage.  FEATURES * RDS(ON) < 3.5Ω @ VGS=10V, I	Unisonic Technologies	mosfet

4N1 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	4N10	N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 4N10 ·FEATURES ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,converte	Inchange Semiconductor	mosfet
2	4N100	N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 4N100 Preliminary 4A, 1000V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N100 is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and high breakdown voltage.  FEATURES * RDS(ON) < 3.5Ω @ VGS=10V, I	Unisonic Technologies	mosfet

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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