DataSheet.jp

4N80 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 4N80
部品説明 N-Channel Power MOSFET
メーカ nELL
ロゴ nELL ロゴ 

Total 8 pages
		

No Preview Available !

4N80 Datasheet, 4N80 PDF,ピン配置, 機能
SEMICONDUCTOR
4N80 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
DESCRIPTION
(4A, 800Volts)
The Nell 4N80 is a three-terminal silicon
device with current conduction capability of 4A,
fast switching speed, low on-state resistance,
breakdown voltage rating of 800V ,and max.
threshold voltage of 5 volts.
They are designed for use in applications. such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits,
and general purpose switching applications .
FEATURES
RDS(ON) = 3.6Ω @ VGS = 10V
Ultra low gate charge(25nC max.)
Low reverse transfer capacitance
(CRSS = 9pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D
GDS
TO-220AB
(4N80A)
GDS
TO-220F
(4N80AF)
D (Drain)
G
(Gate)
PRODUCT SUMMARY
ID (A)
4
VDSS (V)
800
RDS(ON) (Ω)
3.6 @ VGS = 10V
QG(nC) max.
25
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
Drain to Source voltage
TJ=25°C to 150°C
VDGR
Drain to Gate voltage
RGS=20KΩ
VGS Gate to Source voltage
ID Continuous Drain Current
TC=25°C
TC=100°C
IDM Pulsed Drain current(Note 1)
IAR Avalanche current(Note 1)
EAR Repetitive avalanche energy(Note 1)
IAR=4A, RGS=50Ω, VGS=10V
EAS Single pulse avalanche energy(Note 2)
IAS=4A, L=57mH
dv/dt
Peak diode recovery dv/dt(Note 3)
TO-220AB
PD
Total power dissipation (Derate above 25°C)
TC=25°C
TO-220F
TJ Operation junction temperature
TSTG
TL
Storage temperature
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature..
2.IAS = 4A, VDD = 50V, L = 57mH, RGS = 25Ω, starting TJ=25°C.
3.ISD ≤ 4A, di/dt ≤ 200A/µs, VDD V(BR)DSS, starting TJ=25°C.
1.6mm from case
VALUE
800
800
±30
4
2.5
15.6
4
13
460
4.0
106 (0.85)
36 (0.29)
-55 to 150
-55 to 150
300
10 (1.1)
UNIT
V
A
mJ
V /ns
W(W/°C)
ºC
lbf.in (N.m)
www.nellsemi.com
Page 1 of 8

1 Page





ページ 合計 : 8 ページ
PDF
ダウンロード
[ 4N80.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
4N80

N-Channel MOSFET Transistor

Inchange Semiconductor
Inchange Semiconductor
4N80

N-Channel Power MOSFET

nELL
nELL
4N80

N-CHANNEL POWER MOSFET

Unisonic Technologies
Unisonic Technologies
4N80-N

N-CHANNEL POWER MOSFET

Unisonic Technologies
Unisonic Technologies

www.DataSheet.jp    |   2019   |  メール    |   最新    |   Sitemap