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Datasheet 4N80 PDF ( 特性, スペック, ピン接続図 )

部品番号 4N80
部品説明 N-Channel Power MOSFET
メーカ nELL
ロゴ nELL ロゴ 
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4N80 Datasheet, 4N80 PDF,ピン配置, 機能
SEMICONDUCTOR
4N80 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
DESCRIPTION
(4A, 800Volts)
The Nell 4N80 is a three-terminal silicon
device with current conduction capability of 4A,
fast switching speed, low on-state resistance,
breakdown voltage rating of 800V ,and max.
threshold voltage of 5 volts.
They are designed for use in applications. such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits,
and general purpose switching applications .
FEATURES
RDS(ON) = 3.6Ω @ VGS = 10V
Ultra low gate charge(25nC max.)
Low reverse transfer capacitance
(CRSS = 9pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D
GDS
TO-220AB
(4N80A)
GDS
TO-220F
(4N80AF)
D (Drain)
G
(Gate)
PRODUCT SUMMARY
ID (A)
4
VDSS (V)
800
RDS(ON) (Ω)
3.6 @ VGS = 10V
QG(nC) max.
25
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
Drain to Source voltage
TJ=25°C to 150°C
VDGR
Drain to Gate voltage
RGS=20KΩ
VGS Gate to Source voltage
ID Continuous Drain Current
TC=25°C
TC=100°C
IDM Pulsed Drain current(Note 1)
IAR Avalanche current(Note 1)
EAR Repetitive avalanche energy(Note 1)
IAR=4A, RGS=50Ω, VGS=10V
EAS Single pulse avalanche energy(Note 2)
IAS=4A, L=57mH
dv/dt
Peak diode recovery dv/dt(Note 3)
TO-220AB
PD
Total power dissipation (Derate above 25°C)
TC=25°C
TO-220F
TJ Operation junction temperature
TSTG
TL
Storage temperature
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature..
2.IAS = 4A, VDD = 50V, L = 57mH, RGS = 25Ω, starting TJ=25°C.
3.ISD ≤ 4A, di/dt ≤ 200A/µs, VDD V(BR)DSS, starting TJ=25°C.
1.6mm from case
VALUE
800
800
±30
4
2.5
15.6
4
13
460
4.0
106 (0.85)
36 (0.29)
-55 to 150
-55 to 150
300
10 (1.1)
UNIT
V
A
mJ
V /ns
W(W/°C)
ºC
lbf.in (N.m)
www.nellsemi.com
Page 1 of 8

1 Page



4N80 pdf, ピン配列
SEMICONDUCTOR
ORDERING INFORMATION SCHEME
Current rating, ID
4 = 4A
MOSFET series
N = N-Channel
Voltage rating, VDS
80 = 800V
Package type
A = TO-220AB
AF = TO-220F
4N80 Series RRooHHSS
Nell High Power Products
4 N 80 A
Fig.1 On-region characteristics
Fig.2 Transfer characteristics
101
100
VGS
Top: 15 V
10 V
80 V
70 V
60 V
Bottorm: 5.5 V
10-1
10-2
10-1
*Notes:
1.250µs Pulse test
2.Tc=25°C
100 101
Drain-to-Source voltage, VDS(V)
Fig.3 On-resistance variation vs. drain
current and gate voltage
7
6
5 VGS=10V
4 VGS=20V
3
*Note:TJ=25°C
2
0 2 4 6 8 10
Drain current, ID (A)
101
100
10-1
2
150°C
25°C
-55°C
*Notes:
1.VDS=50V
2.250µs Pulse test
4 68
Gate-Source voltage, VGS (V)
10
Fig.4 Body diode forward voltage variation vs.
Source current and temperature
101
100
10-1
0
25°C
150°C
48
*Notes:
1.VGS=0V
2.250μs Pulse test
12 16 20
Source-drain voltage, VSD(V)
www.nellsemi.com
Page 3 of 8


3Pages


4N80 電子部品, 半導体
SEMICONDUCTOR
TEST CIRCUITS AND WAVEFORMS
Fig.1A Peak diode recovery dv/dt test circuit
4N80 Series RRooHHSS
Nell High Power Products
Fig.1B Peak diode recovery dv/dt waverforms
D.U.T.
+
-
+
VDS
-
L
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* lSD controlled by pulse period
* D.U.T.-Device under test
VDD
Fig.2A Switching test circuit
VDS
VGS
RG
10V
Pulse Width ≤ 1µs
Duty Factor ≤ 0.1%
RL
D.U.T.
VDD
VGS
(Driver)
lSD
(D.U.T.)
VDS
(D.U.T.)
P.W.
Period
D= P.W.
Period
VGS=10V
lFM, Body Diode forward current
di/dt
lRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Fig.2B Switching Waveforms
VDS
90%
10%
VGS
td(ON)
tR
td(OFF)
tF
Fig.3A Gate charge test circuit
Fig.3B Gate charge waveform
Same Type as
12V 50kΩ D.U.T.
0.2µF
0.3µF
VDS
VGS
3mA
D.U.T.
VGS
10V
QGS
www.nellsemi.com
Page 6 of 8
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QGD
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