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PDF 3N80 Data sheet ( Hoja de datos )
| Número de pieza | 3N80 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | nELL | |
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SEMICONDUCTOR
3N80 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
DESCRIPTION
(3A, 800Volts)
The Nell 3N80 is a three-terminal silicon
device with current conduction capability of 3A,
fast switching speed, low on-state resistance,
breakdown voltage rating of 800V ,and max.
threshold voltage of 5 volts.
They are designed for use in applications. such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits,
and general purpose switching applications .
FEATURES
RDS(ON) = 3.80Ω (typ.) @ VGS = 10V
Ultra low gate charge(35nC max.)
Low reverse transfer capacitance
(CRSS = 23pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D
GDS
TO-220AB
(3N80A)
GDS
TO-220F
(3N80AF)
D (Drain)
G
(Gate)
PRODUCT SUMMARY
ID (A)
3
VDSS (V)
800
RDS(ON) (Ω) (typ.)
3.80 @ VGS = 10V
QG(nC) max.
35
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
Drain to Source voltage
TJ=25°C to 150°C
VDGR
Drain to Gate voltage
RGS=20KΩ
VGS Gate to Source voltage
ID Continuous Drain Current
TC=25°C
TC=100°C
IDM Pulsed Drain current(Note 1)
IAR Avalanche current(Note 1)
EAR Repetitive avalanche energy(Note 1)
IAR=3A, RGS=50Ω, VGS=10V
EAS Single pulse avalanche energy(Note 2)
IAS=3A, L=50mH
dv/dt
Peak diode recovery dv/dt(Note 3)
TO-220AB
PD
Total power dissipation (Derate above 25°C)
TC=25°C
TO-220F
TJ Operation junction temperature
TSTG
TL
Storage temperature
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature..
2.IAS = 3A, VDD = 50V, L = 50mH, RGS = 27Ω, starting TJ=25°C.
3.ISD ≤ 3A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, starting TJ=25°C.
1.6mm from case
VALUE
UNIT
800
800 V
±30
3
1.9
A
12
3
10
mJ
240
2.0 V /ns
100 (0.80)
54 (0.43)
-55 to 150
-55 to 150
300
10 (1.1)
W(W/°C)
ºC
lbf.in (N.m)
www.nellsemi.com
Page 1 of 8
1 page  
SEMICONDUCTOR
3N80 Series RRooHHSS
Nell High Power Products
Fig.10 Maximum drain current vs. case
temperature
4
3
2
1
0
25
50
75 100 125 150
Case temperature, TC(°C)
Fig.11-1 Transient Thermal Response Curve for 3N80A
100
D = 0.5
0.2
0.1
10-1
0.05
0.02
0.01
10-2
10-5
Single pulse
10-4
10-3
10-2
PDM
t1
t2
Notes:
1.Rth(j-c)(t)=1.25°C/W Max.
2.Duty factor, D=t1/t2
3.TJM-Tc=PDM×Rth(j-c)(t)
10-1
100
101
Square wave pulse duration , t1(sec.)
Fig.11-2 Transient Thermal Response Curve for 3N80AF
D = 0.5
100
0.2
0.1
0.05
10-1
0.02
0.01
Single pulse
10-2
10-5
10-4
10-3
10-2
10-1
Square wave pulse duration , t1(sec.)
PDM
t1
t2
Notes:
1.Rth(j-c)(t)=3.20°C/W Max.
2.Duty factor, D=t1/t2
3.TJM-Tc=P ×DM Rth(j-c)(t)
100 101
www.nellsemi.com
Page 5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 3N80.PDF ] | |
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