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Datasheet 3N60 PDF ( 特性, スペック, ピン接続図 )

部品番号 3N60
部品説明 N-Channel Power MOSFET
メーカ nELL
ロゴ nELL ロゴ 
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3N60 Datasheet, 3N60 PDF,ピン配置, 機能
SEMICONDUCTOR
3N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(3A, 600Volts)
DESCRIPTION
The Nell 3N60 is a three-terminal silicon
device with current conduction capability
of 3A, fast switching speed, low on-state
resistance, breakdown voltage rating of 600V,
and max. threshold voltage of 4 volts.
They are designed for use in applications such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits
and general purpose switching applications.
FEATURES
RDS(ON) = 3.6Ω@VGS = 10V
Ultra low gate charge(13nC max.)
Low reverse transfer capacitance
(CRSS = 5.5pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D
GDS
TO-251 (I-PAK)
(3N60F)
D
D
G
S
TO-252 (D-PAK)
(3N60G)
GDS
TO-220AB
(3N60A)
GDS
TO-220F
(3N60AF)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
3
600
3.6 @ VGS = 10V
13
D (Drain)
G
(Gate)
S (Source)
www.nellsemi.com
Page 1 of 9

1 Page



3N60 pdf, ピン配列
SEMICONDUCTOR
3N60 Series RRooHHSS
Nell High Power Products
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max.
V(BR)DSS Drain to Source breakdown voltage
ID=250µA,VGS=0V
600
∆V(BR)DSS/∆TJ Breakdown voltage temperature coefficient
IDSS
Drain to source leakage current
IGSS
RDS(ON)
Gate to source forward leakage current
Gate to source reverse leakage current
Static drain to source on-state resistance
ID=250µA,VDS=VGS
VDS=600V, VGS=0V TC=25°C
VDS=480V, VGS=0V TC=125°C
VGS=30V,VDS=0V
VGS=-30V,VDS=0V
ID=1.5A,VGS=10V
0.6
10.0
100
100
-100
2.8 3.6
VGS(TH) Gate threshold voltage
VGS=VDS,ID=250µA
2.0 4.0
CISS
Input capacitance
350 450
COSS
Output capacitance
VDS=25A, VGS=0V, f=1MHz
50 65
CRSS
Reverse transfer capacitance
5.5 7.5
td(ON)
tr
td(OFF)
Turn-on delay time
Rise time
Turn-off delay time
VDD=300V, VGS=10V,
ID=3A, RGS=25Ω (Note 1, 2)
10 30
30 70
20 50
tf
QG
QGS
QGD
Fall time
Total gate charge
Gate to source charge
Gate to drain charge (Miller cgarge)
VDD=480V,VGS=10V,
ID=3A (Note 1,2)
30 70
10 13
2.6
5
UNIT
V
V/°C
µA
nA
V
pF
ns
nC
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
VSD Diode forward voltage
ISD = 3A, VGS = 0V
1.4 V
Is (IsD)
Continuous source to drain current
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
3
ISM Pulsed source current
trr Reverse recovery time
Qrr Reverse recovery charge
Note: 1. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
G
(Gate)
S (Source)
ISD = 3A, VGS = 0V,
dIF/dt = 100A/µs
A
12
210 ns
1.2 µC
www.nellsemi.com
Page 3 of 9


3Pages


3N60 電子部品, 半導体
SEMICONDUCTOR
TYPICAL CHARACTERISTICS
Fig.1 On-state characteristics
10 VGS
Top: 15.0V
10.0V
8.0V
7.0V
6.5V
1 6.0V
Bottorm:5.5V
7
6.5
6
5.5
0.1
Notes:
1.250µs Pulse Test
2.Tc=25°C
0.1 1
10
Drain-to-source voltage, VDS (V)
Fig.3 On-resistance variation vs.
drain current and gate voltage
6
5
4 VGS=20V
3 VGS=10V
2
1
Notes:TJ=25°C
0
0 2 4 6 8 10 12 14
Drain current, ID (A)
Fig.5 Capacitance characteristics
(non-repetitive)
600
500
400
300
200
100
CISS=CGS+CGD (CDS=shorted)
COSS=CDS+CGD CRSS=CGD
CISS
COSS
CRSS
Notes:
1.VGS=0V
2.f=1MHz
0
0.1
1 10
Drain-source voltage, VDS (V)
3N60 Series RRooHHSS
Nell High Power Products
Fig.2 Transfer characteristics
10
1
0.1
2
Notes:
1.VDS=50V
2.250µs Pulse Test
4 6 8 10
Gate-source voltage, VGS (V)
Fig.4 Reverse drain current vs.
source-drain voltage
10
1
0.1
0.2
Notes:
1.VGS=0V
2.250µs Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6
Source to drain voltage, VSD (V)
Fig.6 Gate charge characteristics
12
10
8
6
4
2
0
0
VDS=300V VDS=480V
VDS=120V
2 4 6 8 10
Total gate charge, QG (nC)
www.nellsemi.com
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