DataSheet.jp

3N60 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 3N60
部品説明 N-Channel Power MOSFET
メーカ nELL
ロゴ nELL ロゴ 

Total 9 pages
		

No Preview Available !

3N60 Datasheet, 3N60 PDF,ピン配置, 機能
SEMICONDUCTOR
3N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(3A, 600Volts)
DESCRIPTION
The Nell 3N60 is a three-terminal silicon
device with current conduction capability
of 3A, fast switching speed, low on-state
resistance, breakdown voltage rating of 600V,
and max. threshold voltage of 4 volts.
They are designed for use in applications such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits
and general purpose switching applications.
FEATURES
RDS(ON) = 3.6Ω@VGS = 10V
Ultra low gate charge(13nC max.)
Low reverse transfer capacitance
(CRSS = 5.5pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D
GDS
TO-251 (I-PAK)
(3N60F)
D
D
G
S
TO-252 (D-PAK)
(3N60G)
GDS
TO-220AB
(3N60A)
GDS
TO-220F
(3N60AF)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
3
600
3.6 @ VGS = 10V
13
D (Drain)
G
(Gate)
S (Source)
www.nellsemi.com
Page 1 of 9

1 Page





ページ 合計 : 9 ページ
PDF
ダウンロード
[ 3N60.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
3N60

There is a function of N-Channel Power MOSFET.

nELL
nELL
3N60

There is a function of N-Channel MOSFET Transistor.

Inchange Semiconductor
Inchange Semiconductor
3N60

There is a function of N-CHANNEL POWER MOSFET.

Unisonic Technologies
Unisonic Technologies
3N60A

There is a function of 600V N-CHANNEL POWER MOSFET.

Unisonic Technologies
Unisonic Technologies

多くを見つけるデータシート

部品番号部品説明メーカ
82S129

The 82S126 and 82S129 are field programmable, which means that custom patterns are immediately available by following the Signetics Generic fusing procedure. 1K-bit TTL Bipolar PROM, Address access time : 50ns max.

NXP
NXP
D1695

This part is a darlington connection NPN silicon epitaxial transistor. The 2SD1695 is a Darlington connection transistor and incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between the collector and base. This transistor is ideal for drives in solenoid and actuators.

NEC
NEC

www.DataSheet.jp    |   2018   |  メール    |   最新    |   Sitemap