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3N60 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 3N60
部品説明 N-Channel MOSFET Transistor
メーカ Inchange Semiconductor
ロゴ Inchange Semiconductor ロゴ 

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3N60 Datasheet, 3N60 PDF,ピン配置, 機能
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
3N60
·FEATURES
·Drain Current ID=3.0A@ TC=25
·Drain Source Voltage-
: VDSS= 600V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 2.5Ω(Max)
·Fast Switching
·APPLICATIONS
·Switching power supplies,converters,AC and DC motor controls
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600 V
VGS Gate-Source Voltage-Continuous
±30
V
ID Drain Current-Continuous
3A
IDM Drain Current-Single Plused
12 A
PD Total Dissipation @TC=25
75 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
MAX UNIT
1.67 /W
62.5 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark

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