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RJK1590DP3-A0 の電気的特性と機能

RJK1590DP3-A0のメーカーはRenesasです、この部品の機能は「High Speed Power Switching MOS FET」です。


製品の詳細 ( Datasheet PDF )

部品番号 RJK1590DP3-A0
部品説明 High Speed Power Switching MOS FET
メーカ Renesas
ロゴ Renesas ロゴ 




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RJK1590DP3-A0 Datasheet, RJK1590DP3-A0 PDF,ピン配置, 機能
RJK1590DP3-A0
150 V - 1 A - MOS FET
High Speed Power Switching
Features
Capable of 2.5 V gate drive
Low drive current
Low on-resistance
RDS (on) = 1.5 typ. (at VGS = 4 V)
Outline
RENESAS Package code: PRSP0004ZB-A
(Package name: SOT-223)
4
3
2
1
G
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel to ambient thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
Symbol
VDSS
VGSS
ID
ID (pulse) Note 1
IDR
Pch
ch-a
Tch
Tstg
Data Sheet
R07DS1255EJ0100
Rev.1.00
Mar 30, 2015
D
1. Gate
2. Drain
3. Source
4. Drain
S
Value
150
10
1
4
1
1.04
120
150
–55 to +150
(Ta = 25C)
Unit
V
V
A
A
A
W
C/W
C
C
R07DS1255EJ0100 Rev.1.00
Mar 30, 2015
Page 1 of 7

1 Page





RJK1590DP3-A0 pdf, ピン配列
RJK1590DP3-A0
Main Characteristics
Maximum Safe Operation Area
10
3 PW
1 = 10 μs
0.3
0.1
0.03
0.01
Operation in
this area is
limited by RDS(on)
0.003 Ta = 25°C
1 shot
0.001
0.1 0.3 1
3
10 30 100 300 1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
5
VDS = 10 V
Pulse Test
4
3
Tc = –25°C
25°C
75°C
2
1
0
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
10
Ta = 25°C
5 Pulse Test
VGS = 2.5 V
2
1 4V
0.5
0.2
0.1
0.1
0.3 1 3
Drain Current ID (A)
10
R07DS1255EJ0100 Rev.1.00
Mar 30, 2015
Typical Output Characteristics
2.5
Ta = 25°C
Pulse Test
2.0 4 V
3V
1.5
2.5 V
2V
1.0
0.5 VGS = 1.5 V
0
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage (Typical)
3
Ta = 25°C
Pulse Test
2
ID = 1 A
1
0.5 A
0.2 A
0
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
5
Ta = 25°C
Pulse Test
4
0.2 A
0.5 A
3 ID = 1 A
VGS = 2.5 V
2
1
4V
0.2 A
0.5 A
ID = 1 A
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Page 3 of 7


3Pages


RJK1590DP3-A0 電子部品, 半導体
RJK1590DP3-A0
Package Dimensions
Package Name
SOT-223
JEITA Package Code
RENESAS Code
PRSP0004ZB-A
Previous Code
SOT-223A
MASS (Typ) [g]
0.12
Unit: mm
D
b2
4
AC
C
0.10 M C B
0.08
SEE
DETAIL A
Pin No.1
23
BB
e e1/2
e1
b
0.10 M C B
c
GAUGE PLANE
b
L
DETAIL A
b2
B-B Cross Section
C-C Cross Section
Reference Dimensions in millimeters
Symbol Min Nom Max
A 1.52 1.66 1.80
A1 0.02 0.10
A2 1.50 1.70
b 0.60 0.80
b2 2.90 3.10
c 0.23 0.33
D 6.30 6.70
E 6.70 7.30
E1 3.30 3.70
e 2.30 BASIC
e1 4.60 BASIC
L 0.90 1.10
© 2015 Renesas Electronics Corporation. All rights reserved.
R07DS1255EJ0100 Rev.1.00
Mar 30, 2015
Page 6 of 7

6 Page



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部品番号部品説明メーカ
RJK1590DP3-A0

High Speed Power Switching MOS FET

Renesas
Renesas
RJK1590DP3-A0

High Speed Power Switching MOS FET

Renesas
Renesas


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