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Datasheet 2SK3107C PDF ( 特性, スペック, ピン接続図 )

部品番号 2SK3107C
部品説明 N-CHANNEL MOSFET
メーカ Renesas
ロゴ Renesas ロゴ 
プレビュー
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2SK3107C Datasheet, 2SK3107C PDF,ピン配置, 機能
Preliminary Data Sheet
2SK3107C
N-CHANNEL MOSFET FOR SWITCHING
R07DS1286EJ0200
Rev.2.00
Jul 16, 2015
Description
The 2SK3107C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven
directly by a 4.5 V power source.
Features
Directly driven by a 4.5 V power source.
Low on-state resistance
RDS(on)1 = 2.7 MAX. (VGS = 10 V, ID = 100 mA)
RDS(on)2 = 3.2 MAX. (VGS = 4.5 V, ID = 50 mA)
Ordering Information
Part Number
Lead Plating
Packing
Package
2SK3107C-T1-A/AT
-A:Sn-Bi , -AT:Pure Sn
3000p/Reel
SC-75 (3pUSM)
Remark "-A/AT" indicates Pb-free. This product does not contain Pb in external electrode and other parts.
Marking XP
Absolute Maximum Ratings (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
Gate to Source Voltage (VDS = 0 V)
VGSS
20
Drain Current (DC)
ID(DC)
200
Drain Current (pulse) Note1
ID(pulse)
800
Total Power Dissipation Note2
PT 200
Channel Temperature
Tch 150
Storage Temperature
Tstg 55 to 150
Note 1. PW 10 s, Duty Cycle 1%
Note 2. Mounted on ceramic substrate of 3.0 cm2 x 0.64 mm
V
V
mA
mA
mW
C
C
R07DS1286EJ0200 Rev.2.00
Jul 16, 2015
Page 1 of 6

1 Page



2SK3107C pdf, ピン配列
2SK3107C
Typical Characteristics (TA = 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TA – Ambient Temperature - C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
VGS = 10 V
4.5 V
24
Pulsed
68
VDS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3
VDS = VGS
ID = 250 A
2.5
2
1.5
1
-50 0 50 100 150
Tch - Channel Temperature - C
R07DS1286EJ0200 Rev.2.00
Jul 16, 2015
FORWARD BIAS SAFE OPERATING AREA
1
ID(pulse)=0.8A
ID(DC)=0.2A
0.1
1ms
10ms
100ms
DC
Power Dissipation Limited
TA=25°C
Single Pulse
0.011
10
VDS - Drain to Source Voltage – V
100
FORWARD TRANSFER CHARACTERISTICS
1
VDS = 5 V
Pulsed
0.1
0.01
0.001
TA = 125C
75C
25C
25C
0.0001
0
12345
VGS - Gate to Source Voltage – V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1
TA = 25C
25C
75C
125C
0.1
0.01
0.01
VDS = 10 V
Pulsed
0.1
ID - Drain Current - A
1
Page 3 of 6


3Pages


2SK3107C 電子部品, 半導体
2SK3107C
Package Drawings (Unit: mm)
SC-75 (3pUSM)
Equivalent Circuit
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
R07DS1286EJ0200 Rev.2.00
Jul 16, 2015
Page 6 of 6

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