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Datasheet 2SK3054C PDF ( 特性, スペック, ピン接続図 )

部品番号 2SK3054C
部品説明 N-CHANNEL MOSFET
メーカ Renesas
ロゴ Renesas ロゴ 
プレビュー
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2SK3054C Datasheet, 2SK3054C PDF,ピン配置, 機能
Preliminary Data Sheet
2SK3054C
N-CHANNEL MOSFET FOR SWITCHING
R07DS1285EJ0200
Rev.2.00
Jul 16, 2015
Description
The 2SK3054C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven
directly by a 4.5 V power source.
Features
Directly driven by a 4.5 V power source.
Low on-state resistance
RDS(on)1 = 2.7 MAX. (VGS = 10 V, ID = 100 mA)
RDS(on)2 = 3.2 MAX. (VGS = 4.5 V, ID = 50 mA)
Ordering Information
Part Number
Lead Plating
Packing
Package
2SK3054C-T1B-A/AT
-A:Sn-Bi , -AT:Pure Sn
3000p/Reel
SC-70 (3pSSP)
Remark "-A/AT" indicates Pb-free. This product does not contain Pb in external electrode and other parts.
Marking XM
Absolute Maximum Ratings (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) Note
Total Power Dissipation
Channel Temperature
Storage Temperature
Note PW 10 s, Duty Cycle 1%
VDSS
VGSS
ID(DC)
ID(pulse)
PT
Tch
Tstg
60
20
200
800
150
150
55 to 150
V
V
mA
mA
mW
C
C
R07DS1285EJ0200 Rev.2.00
Jul 16, 2015
Page 1 of 6

1 Page



2SK3054C pdf, ピン配列
2SK3054C
Typical Characteristics (TA = 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TA – Ambient Temperature - C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
VGS = 10 V
4.5 V
24
Pulsed
68
VDS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3
VDS = VGS
ID = 250 A
2.5
2
1.5
1
-50 0 50 100 150
Tch - Channel Temperature - C
R07DS1285EJ0200 Rev.2.00
Jul 16, 2015
FORWARD BIAS SAFE OPERATING AREA
1
ID(pulse)=0.8A
ID(DC)=0.2A
0.1
10ms
TA=25°C
Single Pulse
1ms
100ms
DC
Power Dissipation Limited
0.011
10
VDS - Drain to Source Voltage – V
100
FORWARD TRANSFER CHARACTERISTICS
1
VDS = 5 V
Pulsed
0.1
0.01
0.001
TA = 125C
75C
25C
25C
0.0001
0
12345
VGS - Gate to Source Voltage – V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1
TA = 25C
25C
75C
125C
0.1
0.01
0.01
VDS = 10 V
Pulsed
0.1
ID - Drain Current - A
1
Page 3 of 6


3Pages


2SK3054C 電子部品, 半導体
2SK3054C
Package Drawings (Unit: mm)
SC-70 (3pSSP)
Equivalent Circuit
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
R07DS1285EJ0200 Rev.2.00
Jul 16, 2015
Page 6 of 6

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