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Datasheet 2SK2857C PDF ( 特性, スペック, ピン接続図 )

部品番号 2SK2857C
部品説明 N-CHANNEL MOSFET
メーカ Renesas
ロゴ Renesas ロゴ 
プレビュー
Total 8 pages
		
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2SK2857C Datasheet, 2SK2857C PDF,ピン配置, 機能
Preliminary Data Sheet
2SK2857C
N-CHANNEL MOSFET FOR SWITCHING
R07DS1261EJ0200
Rev.2.00
Jun 11, 2015
Description
The 2SK2857C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven
directly by a 4.0 V power source.
Features
Directly driven by a 4.0 V power source.
Low on-state resistance
RDS(on)1 = 105 m MAX. (VGS = 10 V, ID = 2.0 A)
RDS(on)2 = 150 mMAX. (VGS = 4.0 V, ID = 2.0 A)
Ordering Information
Part Number
Lead Plating
Packing
Package
2SK2857C-T1-AZ/AY
-AZ : Sn-Bi , -AY : Pure Sn
1000p/Reel
SC-62 (3p PoMM)
Remark "-AZ/AY" indicates Pb-free. This product does not contain Pb in external electrode and other parts.
Marking XB
Absolute Maximum Ratings (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC)
ID(DC)
Drain Current (pulse) Note1
ID(pulse)
Total Power Dissipation Note2
PT
Channel Temperature
Tch
Storage Temperature
Tstg
Note1 PW 10 s, Duty Cycle 1%
Note2 16 cm2 X 0.7mm, ceramic substrate used
60
20
4.0
16
2.0
150
55 to 150
V
V
A
A
W
C
C
R07DS1261EJ0200 Rev.2.00
Jun 11, 2015
Page 1 of 6

1 Page



2SK2857C pdf, ピン配列
2SK2857C
Typical Characteristics (TA = 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TA – Ambient Temperature - C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Chapter Title
FORWARD BIAS SAFE OPERATING
AREA
100
ID(pulse)= 16A
10
ID(DC)=4A
1
1ms
10ms
100ms
DC
Power Dissipation Limited
0.1
0.01
0.1
TA=25°C
Single Pulse
1 10
VDS-Drain to Source Voltage-V
100
FORWARD TRANSFER CHARACTERISTICS
VDS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
VGS - Gate to Source Voltage – V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
Tch - Channel Temperature - C
R07DS1261EJ0200 Rev.2.00
Jun 11, 2015
ID - Drain Current - A
Page 3 of 6


3Pages


2SK2857C 電子部品, 半導体
2SK2857C
Package Drawings (Unit: mm)
SC-62 (3pPoMM)
Chapter Title
Equivalent Circuit
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
R07DS1261EJ0200 Rev.2.00
Jun 11, 2015
Page 6 of 6

6 Page





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