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Datasheet 2SK2115 PDF ( 特性, スペック, ピン接続図 )

部品番号 2SK2115
部品説明 Silicon N-Channel MOS FET
メーカ Hitachi Semiconductor
ロゴ Hitachi Semiconductor ロゴ 
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2SK2115 Datasheet, 2SK2115 PDF,ピン配置, 機能
2SK2114, 2SK2115
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for Switching regulator
Outline
TO-220CFM
D 12 3
1. Gate
G 2. Drain
3. Source
S

1 Page



2SK2115 pdf, ピン配列
2SK2114, 2SK2115
Electrical Characteristics (Ta = 25°C)
Item
Drain to source 2SK2114
breakdown
voltage
2SK2115
Gate to source breakdown
voltage
Gate to source leak current
Zero gate
2SK2114
voltage drain
current
2SK2115
Gate to source cutoff voltage
Static drain to 2SK2114
source on state 2SK2115
resistance
Forward transfer admittance
Symbol Min
V(BR)DSS
450
500
V(BR)GSS
±30
I GSS
I DSS
VGS(off)
RDS(on)
2.0
|yfs| 2.5
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note 1. Pulse Test
Ciss
Coss
Crss
t d(on)
tr
t d(off)
tf
VDF
t rr
Typ
1.0
1.2
4.0
640
160
20
10
25
50
30
0.95
300
Max Unit
—V
—V
±10 µA
250 µA
3.0 V
1.4
1.5
—S
— pF
— pF
— pF
— ns
— ns
— ns
— ns
—V
— ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 2.5 A, VGS = 10 V*1
ID = 2.5 A
VDS = 10 V*1
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 2.5 A
VGS = 10 V
RL = 12
IF = 5 A, VGS = 0
IF = 5 A, VGS = 0,
diF / dt = 100 A / µs
See characteristics curve of 2SK1155, 2SK1156.
3


3Pages


2SK2115 電子部品, 半導体
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
Asia (Singapore)
Asia (Taiwan)
Asia (HongKong)
Japan
: http:semiconductor.hitachi.com/
: http://www.hitachi-eu.com/hel/ecg
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
: http://www.hitachi.com.hk/eng/bo/grp3/index.htm
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd.
Hitachi Asia (Hong Kong) Ltd.
16 Collyer Quay #20-00
Group III (Electronic Components)
Hitachi Tower
7/F., North Tower, World Finance Centre,
Singapore 049318
Harbour City, Canton Road, Tsim Sha Tsui,
Tel: 535-2100
Kowloon, Hong Kong
Fax: 535-1533
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Hitachi Asia Ltd.
Telex: 40815 HITEC HX
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

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