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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK2024-01
DESCRIPTION
·Drain Current –ID= 3A@ TC=25℃
·Drain Source Voltage-
: VDSS= 600V(Min)
·Fast Switching Speed
APPLICATIONS
·Switching regulator
·UPS
·DC-DC converters
·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25℃
600
±30
3
V
V
A
ID(puls)
Pulsed Drain Current
12 A
Ptot Total Dissipation@TC=25℃
50 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
2.5 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 35 ℃/W
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
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