2SK2024-01 - N-Channel MOSFET Transistor

部品番号

2SK2024-01

部品説明

N-Channel MOSFET Transistor

メーカ

Inchange Semiconductor

ロゴ

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK2024-01
DESCRIPTION
·Drain Current –ID= 3A@ TC=25℃
·Drain Source Voltage-
: VDSS= 600V(Min)
·Fast Switching Speed
APPLICATIONS
·Switching regulator
·UPS
·DC-DC converters
·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25℃
600
±30
3
V
V
A
ID(puls)
Pulsed Drain Current
12 A
Ptot Total Dissipation@TC=25℃
50 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
2.5 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 35 ℃/W
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
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部品番号	部品説明	メーカ
82S129	The 82S126 and 82S129 are field programmable, which means that custom patterns are immediately available by following the Signetics Generic fusing procedure. 1K-bit TTL Bipolar PROM, Address access time : 50ns max.	NXP
D1695	This part is a darlington connection NPN silicon epitaxial transistor. The 2SD1695 is a Darlington connection transistor and incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between the collector and base. This transistor is ideal for drives in solenoid and actuators.	NEC

2SK2024-01 PDF Datasheet ( 特性, スペック, ピン接続図 )

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