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What is IRFS7730PbF?

This electronic component, produced by the manufacturer "International Rectifier", performs the same function as "Power MOSFET ( Transistor )".


IRFS7730PbF Datasheet PDF - International Rectifier

Part Number IRFS7730PbF
Description Power MOSFET ( Transistor )
Manufacturers International Rectifier 
Logo International Rectifier Logo 


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Total 12 Pages



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Application
Brushed motor drive applications
BLDC motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC inverters
Benefits
Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability
Lead-free, RoHS compliant
StrongIRFET™
IRFB7730PbF
IRFS7730PbF
IRFSL7730PbF
HEXFET® Power MOSFET
  D VDSS
75V
RDS(on) typ.
2.2m
G
max
2.6m
ID (Silicon Limited)
246A
S
ID (Package Limited)
195A
GDS
TO-220AB
IRFB7730PbF
G
Gate
DD
S
G
D2Pak
IRFS7730PbF
D
Drain
S
GD
TO-262
IRFSL7730PbF
S
Source
Base part number Package Type
IRFB7730PbF
IRFSL7730PbF
IRFS7730PbF
TO-220
TO-262
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
IRFB7730PbF
IRFSL7730PbF
IRFS7730PbF
IRFS7730TRLPbF
8
ID = 100A
6
TJ = 125°C
4
2
TJ = 25°C
0
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1 www.irf.com © 2014 International Rectifier
250
Limited by package
200
150
100
50
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
Submit Datasheet Feedback
November 7, 2014

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IRFS7730PbF equivalent
 
1000
TJ = 175°C
100
10 TJ = 25°C
1.0
0.2
VGS = 0V
0.6 1.0 1.4 1.8
VSD, Source-to-Drain Voltage (V)
2.2
Fig 9. Typical Source-Drain Diode Forward Voltage
95
Id = 1.0mA
90
85
80
75
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 11. Drain-to-Source Breakdown Voltage
3.0
IRFB/S/SL7730PbF
1000
100µsec
1msec
100 Limited by
package
OPERATION
10 IN THIS
AREA
LIMITED BY
RDS(on)
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1 1
10msec
DC
10
VDS, Drain-toSource Voltage (V)
Fig 10. Maximum Safe Operating Area
6.0
5.0
4.0
3.0
2.0
1.0
0.0
-10 0 10 20 30 40 50 60 70 80
VDS, Drain-to-Source Voltage (V)
Fig 12. Typical Coss Stored Energy
2.8
2.6
5 www.irf.com
2.4
2.2
2.0
0
Vgs = 5.5V
Vgs = 6.0V
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
20 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
© 2014 International Rectifier
Submit Datasheet Feedback
November 7, 2014


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRFS7730PbF electronic component.


Information Total 12 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
IRFS7730PbFThe function is Power MOSFET ( Transistor ). International RectifierInternational Rectifier

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