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IRF7105PBF の電気的特性と機能

IRF7105PBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF7105PBF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF7105PBF Datasheet, IRF7105PBF PDF,ピン配置, 機能
l Advanced Process Technology
l Ultra Low On-Resistance
l Dual N and P Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
S1
G1
S2
G2
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques. Power dissipation of greater than 0.8W
is possible in a typical PCB mount application.
PD - 95164
IRF7105PbF
HEXFET® Power MOSFET
N-CHANNEL MOSFET
18
27
36
45
P-CHANNEL MOSFET
Top View
D1 N-Ch P-Ch
D1
VDSS
D2
25V -25V
D2 RDS(on) 0.100.25
ID 3.5A -2.3A
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Max.
N-Channel
P-Channel
3.5 -2.3
2.8 -1.8
14 -10
2.0
0.016
± 20
3.0 -3.0
-55 to + 150
Units
A
W
W/°C
V
V/nS
°C
Thermal Resistance Ratings
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambient „
Min.
–––
Typ.
–––
Max.
62.5
Units
°C/W
1
10/6/04

1 Page





IRF7105PBF pdf, ピン配列
N-Channel
IRF7105PbF
VDS , Drain-to-Source Voltage ( V )
Fig 1. Typical Output Characteristics
VDS , Drain-to-Source Voltage ( V )
Fig 2. Typical Output Characteristics
VGS , Gate-to-Source Voltage ( V )
Fig 3. Typical Transfer Characteristics
TJ , Junction Temperature ( °C )
Fig 4. Normalized On-Resistance
Vs. Temperature
VDS , Drain-to-Source Voltage ( V )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
www.irf.com
QG , Total Gate Charge ( nC )
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
3


3Pages


IRF7105PBF 電子部品, 半導体
IRF7105PbF
P-Channel
VSD , Source-to-Drain Voltage ( V )
Fig 18. Typical Source-Drain Diode
Forward Voltage
TA , Ambient Temperature ( °C )
Fig 20. Maximum Drain Current Vs.
Ambient Temperature
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 22a. Gate Charge Test Circuit
6
VDS , Drain-to-Source Voltage ( V )
Fig 19. Maximum Safe Operating Area
VDS
RD
VGS
RG
D.U.T.
-
+ VDD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 21a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 21b. Switching Time Waveforms
-10V
QGS
VG
QG
QGD
Charge
Fig 22b. Basic Gate Charge Waveform
www.irf.com

6 Page



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部品番号部品説明メーカ
IRF7105PBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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