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DIM1500ESM33-TL000 の電気的特性と機能

DIM1500ESM33-TL000のメーカーはDynexです、この部品の機能は「Single Switch IGBT Module」です。


製品の詳細 ( Datasheet PDF )

部品番号 DIM1500ESM33-TL000
部品説明 Single Switch IGBT Module
メーカ Dynex
ロゴ Dynex ロゴ 




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DIM1500ESM33-TL000 Datasheet, DIM1500ESM33-TL000 PDF,ピン配置, 機能
Replaces DS6112-1
DIM1500ESM33-TL000
Single Switch IGBT Module
DS6112-2 September 2014 (LN31983)
FEATURES
Low VCE(sat) Device
10µs Short Circuit Withstand
High Thermal Cycling Capability
High Current Density Enhanced DMOS SPT
Isolated AlSiC Base With AlN Substrates
KEY PARAMETERS
VCES
VCE(sat)* (typ)
IC (max)
IC(PK) (max)
3300V
2.0V
1500A
3000A
* Measured at the auxiliary terminals
APPLICATIONS
High Reliability Inverters
Motor Controllers
Traction Drives
Choppers
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V to
6500V and currents up to 2400A.
The DIM1500ESM33-TL000 is a Low VCE(sat) single
switch 3300V, n-channel enhancement mode,
insulated gate bipolar transistor (IGBT) module. The
IGBT has a wide reverse bias safe operating area
(RBSOA) plus 10μs short circuit withstand. This
device is optimised for traction drives and other
applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety.
3(C)
2(G)
9(C) 7(C)
5(C)
1(E)
8(E) 6(E) 4(E)
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM1500ESM33-TL000
Note: When ordering, please use the complete part
number
Outline type code: E
(See Fig. 11 for further information)
Fig. 2 Package
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
1/8

1 Page





DIM1500ESM33-TL000 pdf, ピン配列
DIM1500ESM33-TL000
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise.
Symbol
Parameter
Test Conditions
VGE = 0V, VCE = VCES
ICES Collector cut-off current
VGE = 0V, VCE = VCES, Tcase = 125°C
VGE = 0V, VCE = VCES, Tcase = 150°C
IGES Gate leakage current
VGE = ± 20V, VCE = 0V
VGE(TH) Gate threshold voltage
IC = 120mA, VGE = VCE
VCE(sat)
Collector-emitter
saturation voltage
VGE = 15V, IC = 1500A
VGE = 15V, IC = 1500A, Tj = 125°C
VGE = 15V, IC = 1500A, Tj = 150°C
IF Diode forward current
DC
IFM Diode maximum forward current tp = 1ms
VF Diode forward voltage
IF = 1500A
IF = 1500A, Tj = 125°C
IF = 1500A, Tj = 150°C
Cies Input capacitance
VCE = 25V, VGE = 0V, f = 1MHz
Qg Gate charge
±15V Including external Cge
Cres Reverse transfer capacitance VCE = 25V, VGE = 0V, f = 1MHz
LM Module inductance
RINT Internal transistor resistance
SCData Short circuit current, ISC
Tj = 150°C, VCC = 2500V
tp ≤ 10μs, VGE ≤ 15V
VCE (max) = VCES L* x dI/dt
IEC 60747-9
Min Typ Max Units
5 mA
90 mA
150 mA
1 μA
5.7 V
2.0 V
2.6 V
2.8 V
1500
A
3000
A
2.4 V
2.5 V
2.4 V
260 nF
25 μC
6 nF
10 nH
90 μ
5500
A
Note:
Measured at the auxiliary terminals
* L is the circuit inductance + LM
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
3/8


3Pages


DIM1500ESM33-TL000 電子部品, 半導体
DIM1500ESM33-TL000
Fig. 7 Diode typical forward characteristics
Fig. 8 Reverse bias safe operating area
Fig. 9 Diode reverse bias safe operating area
Fig. 10 Transient thermal impedance
6/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com

6 Page



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部品番号部品説明メーカ
DIM1500ESM33-TL000

Single Switch IGBT Module

Dynex
Dynex


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