DataSheet.jp

DIM1200ASM45-TL001 の電気的特性と機能

DIM1200ASM45-TL001のメーカーはDynexです、この部品の機能は「Single Switch IGBT Module」です。


製品の詳細 ( Datasheet PDF )

部品番号 DIM1200ASM45-TL001
部品説明 Single Switch IGBT Module
メーカ Dynex
ロゴ Dynex ロゴ 




このページの下部にプレビューとDIM1200ASM45-TL001ダウンロード(pdfファイル)リンクがあります。
Total 8 pages

No Preview Available !

DIM1200ASM45-TL001 Datasheet, DIM1200ASM45-TL001 PDF,ピン配置, 機能
Data
Replaces DS6169-1
Preliminary Information
DIM1200ASM45-TL001
Single Switch IGBT Module
DS6169-2 August 2015 (LN32854)
FEATURES
10.2kV Isolation
10µs Short Circuit Withstand
High Thermal Cycling Capability
High Current Density Enhanced DMOS SPT
Isolated AlSiC Base With AlN Substrates
KEY PARAMETERS
VCES
VCE(sat) * (typ)
IC (max)
IC(PK) (max)
4500V
2.3V
1200A
2400A
* Measured at the auxiliary terminals
APPLICATIONS
High Reliability Inverters
Motor Controllers
Traction Drives
Choppers
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V to
6500V and currents up to 2400A.
The DIM1200ASM45-TL001 is a single switch 4500V,
n-channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide
reverse bias safe operating area (RBSOA) plus 10μs
short circuit withstand. This device is optimised for
traction drives and other applications requiring high
thermal cycling capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety.
3(C)
2(G)
9(C) 7(C)
5(C)
1(E)
8(E) 6(E) 4(E)
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM1200ASM45-TL001
Note: When ordering, please use the complete part
number
Outline type code: A
(See Fig. 11 for further information)
Fig. 2 Package
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
1/8

1 Page





DIM1200ASM45-TL001 pdf, ピン配列
DIM1200ASM45-TL001
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise.
Symbol
Parameter
Test Conditions
ICES
IGES
VGE(TH)
VCE(sat)
IF
IFM
VF
Cies
Qg
Cres
LM
RINT
SCData
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter
saturation voltage
Diode forward current
VGE = 0V, VCE = VCES
VGE = 0V, VCE = VCES, Tcase = 125°C
VGE = ± 20V, VCE = 0V
IC = 120mA, VGE = VCE
VGE = 15V, IC = 1200A
VGE = 15V, IC = 1200A, Tj = 125°C
DC
Diode maximum forward current tp = 1ms
Diode forward voltage
IF = 1200A
IF = 1200A, Tj = 125°C
Input capacitance
VCE = 25V, VGE = 0V, f = 1MHz
Gate charge
±15V Including external Cge
Reverse transfer capacitance VCE = 25V, VGE = 0V, f = 1MHz
Module inductance
Internal transistor resistance
Short circuit current, ISC
Tj = 125°C, VCC = 3400V
tp ≤ 10μs, VGE ≤ 15V
VCE (max) = VCES L* x dI/dt
IEC 60747-9
Min Typ Max Units
4 mA
90 mA
1 μA
5.8 V
2.3 V
2.9 V
1200
A
2400
A
2.8 V
3.2 V
150 nF
17 μC
12 nF
10 nH
90 μ
4800
A
Note:
* L is the circuit inductance + LM
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
3/8


3Pages


DIM1200ASM45-TL001 電子部品, 半導体
DIM1200ASM45-TL001
Fig. 7 Diode typical forward characteristics
Fig. 8 Reverse bias safe operating area
Fig. 9 Diode reverse bias safe operating area
Fig. 10 Transient thermal impedance
6/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com

6 Page



ページ 合計 : 8 ページ
 
PDF
ダウンロード
[ DIM1200ASM45-TL001 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
DIM1200ASM45-TL000

Single Switch IGBT Module

Dynex
Dynex
DIM1200ASM45-TL001

Single Switch IGBT Module

Dynex
Dynex


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap