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Datasheet BAV70T Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BAV70T | SWITCHING DIODE Transys
Electronics
LIMITED
SOT-523 Plastic-Encapsulated Diodes
BAS16T/BAW56T/BAV70T/BAV99T
SWITCHING DIODE
FEATURES
Power dissipation
PD: 150 mW (Tamb=25℃)
Forward Current
IF: Reverse Voltage
75 m A
VR: 85 V Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
SO | Transys | diode |
2 | BAV70T | SILICON EPITAXIAL PLANAR DIODE SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package
: ESM.
Low Forward Voltage
: VF=0.9V (Typ.).
Fast Reverse Recovery Time : trr=1.6ns(Typ.).
Small Total Capacitance : CT=0.9pF (Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum ( | KEC | diode |
3 | BAV70T | Switching Diodes MCC
TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
Features
• Halogen free available upon request by adding suffix "-HF" x Ultra-Small Surface Mount Package x For General Purpose Switching Appl | MCC | diode |
4 | BAV70T | Switching Diode BAW56T/BAV70T/BAV99T
Switching Diode SOT-523
Features
Fast Switching Speed For General Purpose Switching Applications High Conductance
Dimensions in inches and (millimeters)
BAW56T Marking: JD BAV70T Marking: JJ
BAV99T Marking: JE
Maximum Ratings @TA=25℃
Parameter Reverse voltage Fo | LGE | diode |
5 | BAV70T | Switching Diode JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Diode
BAW56T/BAV70T/BAV99T SWITCHING DIODE
FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance
BAW56T
BAV70 T
BAV99T
SOT-523
MARKING:JD JD
MARKING:JJ JJ
MARKING:JE
JE
| JCET | diode |
BAV Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BAV10 | High-speed diode DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BAV10 High-speed diode
Product specification Supersedes data of April 1996 1996 Sep 16
Philips Semiconductors
Product specification
High-speed diode
FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 6 NXP Semiconductors diode | | |
2 | BAV100 | Silicon Epitaxial Planar Diodes SURGE diode | | |
3 | BAV100 | Hermetically Sealed Glass High Voltage Switching Diodes Small Signal Product
CREAT BY ART
BAV100/101/102/103
Taiwan Semiconductor
Hermetically Sealed Glass High Voltage Switching Diodes
FEATURES
- High voltage switching device - Ideal for automated placement - Hermetically sealed glass - Compression bonded construction - All external surfaces are cor Taiwan Semiconductor diode | | |
4 | BAV100 | Small Signal Diodes MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth
!"# $
% !"#
Features
• Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
• Moisture Sensitivity Leve MCC diode | | |
5 | BAV100 | HIGH SPEED SILICON DIODES Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
HIGH SPEED SILICON DIODES
BAV100, BAV101 BAV102, BAV103
SOD - 80C Mini MELF (LL- 34 )
Polarity: Cathode is indicated by a white band
Hermetically Sealed, Glass Silicon Diodes
Intended for Switching and Gener CDIL diode | | |
6 | BAV100 | Surface Mount Small Signal Switching Diode Elektronische Bauelemente
BAV100 ~ BAV103
Surface Mount Small Signal Switching Diode
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
SOD-80 (Mini-MELF) Package Surface Device Type Mounting Hermetically Sealed Glass Compression Bonded Construction SeCoS diode | | |
7 | BAV100 | Ultrafast silicon rectifier diodes BAV 100...BAV 103
Surface mount diode
Ultrafast silicon rectifier diodes
BAV 100...BAV 103 Forward Current: 0,2 A Reverse Voltage: 50 to 300 V
Features
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Semikron rectifier | |
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