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PDF SSPR40N06 Data sheet ( Hoja de datos )
| Número de pieza | SSPR40N06 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
SSPR40N06
40A , 60V , RDS(ON) 12 mΩ
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSPR40N06 provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The SPR-8PP package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
SPR-8PP
FEATURES
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
MARKING
40N06
= Date code
PACKAGE INFORMATION
Package
MPQ
SPR-8PP
3K
Leader Size
13 inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
3.25 3.40
3.05 3.25
3.20 3.40
3.00 3.20
0.65 BSC.
2.40 2.60
REF.
G
H
I
J
K
L
Millimeter
Min. Max.
1.35 1.55
0.24 0.35
1.13 REF.
0.30 0.50
0.10 0.20
0.70 0.90
SD
SD
SD
GD
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1@VGS=10V TC=25°C
TC=100°C
Pulsed Drain Current 2
TC=25°C
Single Pulse Avalanche Energy 3
VDS
VGS
ID
I DM
EAS
60
±20
40
28
110
50
Avalanche Current
Total Power Dissipation 4
TC=25°C
Operating Junction & Storage Temperature
IAS
PD
TJ, TSTG
30
69
-55~150
Thermal Resistance Rating
Thermal Resistance Junction-Ambient1(Max).
Thermal Resistance Junction-Case1(Max).
RθJA
RθJC
36
1.8
Unit
V
V
A
A
mJ
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
30-May-2014 Rev.A
Any changes of specification will not be informed individually.
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SSPR40N06.PDF ] | |
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