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QIS1260015 の電気的特性と機能

QIS1260015のメーカーはPowerexです、この部品の機能は「IGBT Module」です。


製品の詳細 ( Datasheet PDF )

部品番号 QIS1260015
部品説明 IGBT Module
メーカ Powerex
ロゴ Powerex ロゴ 




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QIS1260015 Datasheet, QIS1260015 PDF,ピン配置, 機能
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
QIS1260015 Preliminary
Single IGBTMOD™
NX-Series Module
600 Amperes/1200 Volts
A
D
E
JF
G
H
Q
ST U
R
ST
QU
W
VX
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
47 24
48 23
DETAIL "B"
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
M LK
N
DETAIL "A"
KP L
AK
JY
(4 PLACES)
AD
AE
AF
AA B
Z AB
AG
AC (4 PLACES)
AJ
AH
AL
AMC
AT
AU
AW
AV
AX
DETAIL "B"
E(24) E(23)
C(22)
E1(16)
AP
AN AQ
AR
AS
G1(15)
Th
NTC
C(47) C(48) TH1
(1)
TH2
(2)
DETAIL "A"
*ALL PIN DIMENSIONS WITHIN
A TOLERANCE OF ±0.5
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
T
U
V
W
X
Y
Inches
Millimeters
5.98 152.0
2.44 62.0
0.67 17.0
5.39
137.0
4.79 121.7
4.33±0.02 110.0±0.5
3.89 99.0
3.72 94.5
0.53 13.5
0.15 3.8
0.28 7.25
0.30 7.75
1.95 49.54
0.9 22.86
0.55 14.0
0.87 22.0
0.67 17.0
0.48 12.0
0.24 6.0
0.16 4.2
0.37 6.5
0.83 21.14
M6 M6
Dimensions
Z
AA
AB
AC
AD
AE
AF
AG
AH
AJ
AK
AL
AM
AN
AP
AQ
AR
AS
AT
AU
AV
AW
AX
Inches
Millimeters
1.53 39.0
1.97±0.02 50.0±0.5
2.26 57.5
0.22 Dia.
5.5 Dia.
0.67+0.04/-0.02 17.0+1.0/-0.5
0.51 13.0
0.27 7.0
0.03 0.8
0.81 20.5
0.12 3.0
0.14 3.5
0.21 5.4
0.49 12.5
0.15 3.81
0.05 1.15
0.025
0.65
0.29 7.4
0.24 6.2
0.17 Dia.
4.3 Dia.
0.10 Dia.
2.5 Dia.
0.08 Dia.
2.1 Dia.
0.06 1.5
0.49 12.5
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of one IGBT Transistor
in a single configuration with a
reverse connected rectifier grade
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Rectifier Grade
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
QIS1260015 is a 1200V (VCES),
600 Ampere Single IGBTMOD™
Power Module.
12/10 Rev. 1
1

1 Page





QIS1260015 pdf, ピン配列
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QIS1260015
Single IGBTMOD™ NX-Series Module
600 Amperes/1200 Volts
Preliminary
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Inverter Sector
Characteristics
Symbol
Test Conditions
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
ICES
VGE(th)
IGES
VCE(sat)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Inductive
Turn-on Delay Time
Load
Turn-on Rise Time
Switch
Turn-off Delay Time
Time
Turn-off Fall Time
Emitter-Collector Voltage
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
VEC*3
VCE = VCES, VGE = 0V
IC = 60mA, VCE = 10V
VGE = VGES, VCE = 0V
IC = 600A, VGE = 15V, Tj = 25°C*6
IC = 600A, VGE = 15V, Tj = 125°C*6
IC = 600A, VGE = 15V, Tj = 150°C*6
VCE = 10V, VGE = 0V
VCC = 600V, IC = 600A, VGE = 15V
VCC = 600V, IC = 600A,
VGE = ±15V,
RG = 2.2Ω, IE = 600A,
Inductive Loas Switching Operation
IE = 600A, VGE = 0V, Tj = 25°C*6
IE = 600A, VGE = 0V, Tj = 125°C*6
Min.
6
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Module Lead Resistance
Thermal Resistance, Junction to Case*1
Thermal Resistance, Junction to Case*1
Contact Thermal Resistance*1
(Case to Heatsink)
Rlead
Rth(j-c)Q
Rth(j-c)D
Rth(c-f)
Main Termnals-Chip (Per Switch)
Per IGBT
Per FWDi
Thermal Grease Applied
(Per 1 Module)*2
Internal Gate Resistance
External Gate Resistance
RGint
RG
TC = 25°C
TC = 125°C
Min.
0.7
1.4
1.0
NTC Thermistor Sector, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Zero Power Resistance
R TC = 25°C
Deviation of Resistance
R/R
TC = 100°C, R100 = 493Ω
B Constant
B(25/50)
Approximate by Equation*9
Power Dissipation
P25 TC = 25°C
*1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips.
*2 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m K)].
*3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*9
B(25/50)
=
In(
RR5205)/(
1
T25
1
T50
)
R25; Resistance at Absolute Temperature T25 [K], R50; resistance at Absolute Temperature T50
T25 = 25 [°C] + 273.15 = 298.15 [K], T50 = 50 [°C] + 273.15 = 323.15 [K]
[K],
Min.
4.85
–7.3
Typ.
7
2.0
2.2
1.9
3000
1.0
0.9
Max.
1.0
8
0.5
2.6
100
9.0
2.0
660
190
700
600
1.2
1.1
Units
mA
Volts
μA
Volts
Volts
Volts
nF
nF
nF
nC
ns
ns
ns
ns
Volts
Volts
Typ.
0.6
0.015
Max.
0.033
0.028
Units
mΩ
°C/W
°C/W
°C/W
1.0 1.3
2.0 2.6
— 10
Ω
Ω
Ω
Typ.
5.00
3375
Max.
5.15
+7.8
10
Units
kΩ
%
K
mW
12/10 Rev. 1
3


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部品番号部品説明メーカ
QIS1260015

IGBT Module

Powerex
Powerex


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