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QIS1260015のメーカーはPowerexです、この部品の機能は「IGBT Module」です。 |
部品番号 | QIS1260015 |
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部品説明 | IGBT Module | ||
メーカ | Powerex | ||
ロゴ | |||
このページの下部にプレビューとQIS1260015ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
QIS1260015 Preliminary
Single IGBTMOD™
NX-Series Module
600 Amperes/1200 Volts
A
D
E
JF
G
H
Q
ST U
R
ST
QU
W
VX
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
47 24
48 23
DETAIL "B"
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
M LK
N
DETAIL "A"
KP L
AK
JY
(4 PLACES)
AD
AE
AF
AA B
Z AB
AG
AC (4 PLACES)
AJ
AH
AL
AMC
AT
AU
AW
AV
AX
DETAIL "B"
E(24) E(23)
C(22)
E1(16)
AP
AN AQ
AR
AS
G1(15)
Th
NTC
C(47) C(48) TH1
(1)
TH2
(2)
DETAIL "A"
*ALL PIN DIMENSIONS WITHIN
A TOLERANCE OF ±0.5
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
T
U
V
W
X
Y
Inches
Millimeters
5.98 152.0
2.44 62.0
0.67 17.0
5.39
137.0
4.79 121.7
4.33±0.02 110.0±0.5
3.89 99.0
3.72 94.5
0.53 13.5
0.15 3.8
0.28 7.25
0.30 7.75
1.95 49.54
0.9 22.86
0.55 14.0
0.87 22.0
0.67 17.0
0.48 12.0
0.24 6.0
0.16 4.2
0.37 6.5
0.83 21.14
M6 M6
Dimensions
Z
AA
AB
AC
AD
AE
AF
AG
AH
AJ
AK
AL
AM
AN
AP
AQ
AR
AS
AT
AU
AV
AW
AX
Inches
Millimeters
1.53 39.0
1.97±0.02 50.0±0.5
2.26 57.5
0.22 Dia.
5.5 Dia.
0.67+0.04/-0.02 17.0+1.0/-0.5
0.51 13.0
0.27 7.0
0.03 0.8
0.81 20.5
0.12 3.0
0.14 3.5
0.21 5.4
0.49 12.5
0.15 3.81
0.05 1.15
0.025
0.65
0.29 7.4
0.24 6.2
0.17 Dia.
4.3 Dia.
0.10 Dia.
2.5 Dia.
0.08 Dia.
2.1 Dia.
0.06 1.5
0.49 12.5
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of one IGBT Transistor
in a single configuration with a
reverse connected rectifier grade
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Rectifier Grade
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
QIS1260015 is a 1200V (VCES),
600 Ampere Single IGBTMOD™
Power Module.
12/10 Rev. 1
1
1 Page Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QIS1260015
Single IGBTMOD™ NX-Series Module
600 Amperes/1200 Volts
Preliminary
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Inverter Sector
Characteristics
Symbol
Test Conditions
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
ICES
VGE(th)
IGES
VCE(sat)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Inductive
Turn-on Delay Time
Load
Turn-on Rise Time
Switch
Turn-off Delay Time
Time
Turn-off Fall Time
Emitter-Collector Voltage
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
VEC*3
VCE = VCES, VGE = 0V
IC = 60mA, VCE = 10V
VGE = VGES, VCE = 0V
IC = 600A, VGE = 15V, Tj = 25°C*6
IC = 600A, VGE = 15V, Tj = 125°C*6
IC = 600A, VGE = 15V, Tj = 150°C*6
VCE = 10V, VGE = 0V
VCC = 600V, IC = 600A, VGE = 15V
VCC = 600V, IC = 600A,
VGE = ±15V,
RG = 2.2Ω, IE = 600A,
Inductive Loas Switching Operation
IE = 600A, VGE = 0V, Tj = 25°C*6
IE = 600A, VGE = 0V, Tj = 125°C*6
Min.
—
6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Module Lead Resistance
Thermal Resistance, Junction to Case*1
Thermal Resistance, Junction to Case*1
Contact Thermal Resistance*1
(Case to Heatsink)
Rlead
Rth(j-c)Q
Rth(j-c)D
Rth(c-f)
Main Termnals-Chip (Per Switch)
Per IGBT
Per FWDi
Thermal Grease Applied
(Per 1 Module)*2
Internal Gate Resistance
External Gate Resistance
RGint
RG
TC = 25°C
TC = 125°C
Min.
—
—
—
—
0.7
1.4
1.0
NTC Thermistor Sector, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Zero Power Resistance
R TC = 25°C
Deviation of Resistance
∆R/R
TC = 100°C, R100 = 493Ω
B Constant
B(25/50)
Approximate by Equation*9
Power Dissipation
P25 TC = 25°C
*1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips.
*2 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*9
B(25/50)
=
In(
RR5205)/(
1
T25
–
1
T50
)
R25; Resistance at Absolute Temperature T25 [K], R50; resistance at Absolute Temperature T50
T25 = 25 [°C] + 273.15 = 298.15 [K], T50 = 50 [°C] + 273.15 = 323.15 [K]
[K],
Min.
4.85
–7.3
—
—
Typ.
—
7
—
2.0
2.2
1.9
—
—
—
3000
—
—
—
—
1.0
0.9
Max.
1.0
8
0.5
2.6
—
—
100
9.0
2.0
—
660
190
700
600
1.2
1.1
Units
mA
Volts
μA
Volts
Volts
Volts
nF
nF
nF
nC
ns
ns
ns
ns
Volts
Volts
Typ.
0.6
—
—
0.015
Max.
—
0.033
0.028
—
Units
mΩ
°C/W
°C/W
°C/W
1.0 1.3
2.0 2.6
— 10
Ω
Ω
Ω
Typ.
5.00
—
3375
—
Max.
5.15
+7.8
—
10
Units
kΩ
%
K
mW
12/10 Rev. 1
3
3Pages | |||
ページ | 合計 : 5 ページ | ||
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部品番号 | 部品説明 | メーカ |
QIS1260015 | IGBT Module | Powerex |