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QID3330001 の電気的特性と機能

QID3330001のメーカーはPowerexです、この部品の機能は「Dual IGBT HVIGBT Module」です。


製品の詳細 ( Datasheet PDF )

部品番号 QID3330001
部品説明 Dual IGBT HVIGBT Module
メーカ Powerex
ロゴ Powerex ロゴ 




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QID3330001 Datasheet, QID3330001 PDF,ピン配置, 機能
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
QID3330001
Dual IGBT
HVIGBT Module
300 Amperes/3300 Volts
S NUTS
(3TYP)
A
D
FF
J (2TYP)
C
BE
1 23
H
M
H
G (3TYP)
T (SCREWING
DEPTH)
R (DEEP)
K
(3TYP)
L
(2TYP)
V (4TYP)
U (5TYP)
P
Q
N
41
5
6
2
8
73
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A 5.51 140.0
B 2.87
73.0
C 1.89
48.0
D 4.88±0.01 124.0±0.25
E 2.24±0.01
57.0±0.25
F 1.18
30.0
G 0.43
11.0
H 1.07
27.15
J 0.20
5.0
K 1.65
42.0
Dimensions
L
M
N
P
Q
R
S
T
U
V
Inches
0.69±0.01
0.38
0.20
0.22
1.44
0.16
M6 Metric
0.63 Min.
0.11 x 0.02
0.28 Dia.
Millimeters
17.5±0.25
9.75
5.0
5.5
36.5
4.0
M6
16.0 Min.
2.8 x 0.5
7.0 Dia.
Description:
Powerex HVIGBTs feature highly
insulating housings that offer
enhanced protection by means of
greater creepage and strike clear-
ance distance for many demanding
applications like medium voltage
drives and auxiliary traction
applications.
Features:
-40 to 150°C Extended 
Temperature Range
100% Dynamic Tested
100% Partial Discharge Tested
Advanced Mitsubishi R-Series
Chip Technology
Aluminum Nitride (AlN) Ceramic
Substrate for Low Thermal
Impedance
Complementary Line-up in
Expanding Current Ranges to
Mitsubishi HVIGBT Power
Modules
Copper Baseplate
Creepage and Clearance Meet
IEC 60077-1
Rugged SWSOA and RRSOA
Applications:
High Voltage Power Supplies
Medium Voltage Drives
Motor Drives
Traction
07/14 Rev. 2
1

1 Page





QID3330001 pdf, ピン配列
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID3330001
Dual IGBT HVIGBT Module
300 Amperes/3300 Volts
Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Cies
Output Capacitance
Coes
VGE = 0V, VCE = 10V
Reverse Transfer Capacitance
Cres
Turn-on Delay Time
td(on)
VCC = 1800V, IC = 300A,
Rise Time
tr VGE = ±15V,
Turn-off Delay Time
td(off)
RG(on) = 10Ω, RG(off) = 33.6Ω,
Fall Time
tf LS = 100nH, Inductive Load
Turn-on Switching Energy
Eon Tj = 150°C, IC = 300A, VGE = ±15V,
Turn-off Switching Energy
Eoff RG(on) = 10Ω, RG(off) = 33.6Ω,
VCC = 1800V, LS = 100nH, Inductive Load
Diode Reverse Recovery Time**
trr VCC = 1800V, IE = 300A,
Diode Reverse Recovery Charge**
Qrr VGE = ±15V, RG(on) = 10Ω,
Diode Reverse Recovery Energy
Erec
LS = 100nH, Inductive Load, Tj = 150°C
Stray Inductance (C1-E2)
LSCE
Lead Resistance Terminal-Chip
RCE
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case***
Thermal Resistance, Junction to Case***
Contact Thermal Resistance, Case to Fin
Comparative Tracking Index
Rth(j-c) Q
Rth(j-c) D
Rth(c-f)
CTI
Per IGBT
Per FWDi
Per Module,
Thermal Grease Applied, λgrease = 1W/mK
Clearance Distance in Air (Terminal to Base)
Creepage Distance Along Surface
(Terminal to Base)
da(t-b)
ds(t-b)
Clearance Distance in Air
(Terminal to Terminal)
da(t-t)
Creepage Distance Along Surface
(Terminal to Terminal)
ds(t-t)
*Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
***TC measurement point is just under the chips.
Min. Typ.
— 23
— 1.5
— 0.7
— 800
— 160
— 3200
— 1300
— 480
— 450
Max.
Units
nF
nF
nF
ns
ns
ns
ns
mJ/P
mJ/P
— 700
ns
— 283*
µC
— 330
— mJ/P
— 60 — nH
— 0.8 — mΩ
Min. Typ.
— 0.049
— 0.073
— 0.012
Max.
Units
°C/W
°C/W
°C/W
130 —
35.0 —
64 —
— mm
— mm
19 —
— mm
54 — — mm
07/14 Rev. 2
3


3Pages


QID3330001 電子部品, 半導体
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID3330001
Dual IGBT HVIGBT Module
300 Amperes/3300 Volts
1000
800
600
400
REVERSE BIAS SAFE
OPERATING AREA (TYPICAL)
VCC ≤ 2500V
VGE = +15V/-8V
RG(off) = 33.6Ω
Tj = 150°C
200
0
0 1000 2000 3000 4000
COLLECTOR EMITTER VOLTAGE, VCES, (VOLTS)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
1.2
Single Pulse
1.0
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.8 0.049°C/W
(IGBT)
0.6
Rth(j-c) =
0.073°C/W
(FWDi)
0.4
0.2
0
10-3
10-2
10-1
TIME, (s)
100
101
1000
FREE-WHEEL DIODE
REVERSE RECOVERY SAFE
OPERATING AREA (TYPICAL)
800
600
400
200
VCC ≤ 2500V
di/dt = 1kA/µs
Tj = 150°C
0
0 1000 2000 3000 4000
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
6 07/14 Rev. 2

6 Page



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部品番号部品説明メーカ
QID3330001

Dual IGBT HVIGBT Module

Powerex
Powerex


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