1N4448WS Datasheet PDF - SEMTECH
| Part Number | 1N4448WS | |
| Description | SILICON EPITAXIAL PLANAR DIODE | |
| Manufacturers | SEMTECH | |
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1N4448WS
SILICON EPITAXIAL PLANAR DIODE
Fast Switching Diode
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Peak Reverse Voltage
Reverse Voltage
Average Rectified Output Current
Forward Continuous Current
Non-Repetitive Peak Forward Surge Current (at t = 1 µs)
Power Dissipation
Junction Temperature
Storage Temperature Range
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
12
W2
Top View
Marking Code: "W2"
Simplified outline SOD-323 and symbol
Symbol
VRM
VR
IO
IFM
IFSM
Pd
Tj
Tstg
Value
100
80
150
300
0.5
200
150
- 65 to + 150
Unit
V
V
mA
mA
A
mW
OC
OC
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 5 mA
at IF = 10 mA
at IF = 100 mA
at IF = 150 mA
Reverse Leakage Current
at VR = 80 V
at VR = 20 V
at VR = 75 V, TJ = 150 OC
at VR = 25 V, TJ = 150 OC
Reverse Breakdown Voltage
at IR = 100 µA
Capacitance
at VR = 0.5 V, f = 1 MHz
Reverse Recovery Time
at IF = IR = 10 mA, Irr = 0.1 X IR , RL = 100 Ω
Symbol
VF
IR
V(BR)R
Ctot
trr
Min.
0.62
-
-
-
-
-
-
-
80
-
-
Max.
0.72
0.855
1
1.25
100
25
50
30
-
4
4
Unit
V
nA
nA
µA
µA
V
pF
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/04/2009
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 1N4448WS electronic component. |
| Information | Total 3 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
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| Download | [ 1N4448WS.PDF Datasheet ] | |
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