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5SNS0300U120100 の電気的特性と機能

5SNS0300U120100のメーカーはABBです、この部品の機能は「IGBT Module」です。


製品の詳細 ( Datasheet PDF )

部品番号 5SNS0300U120100
部品説明 IGBT Module
メーカ ABB
ロゴ ABB ロゴ 




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5SNS0300U120100 Datasheet, 5SNS0300U120100 PDF,ピン配置, 機能
VCE =
IC =
1200 V
300 A
IGBT Module LoPak5 SPT
5SNS 0300U120100
· Low-loss, rugged SPT chip-set
· Smooth switching SPT chip-set for
good EMC
· Low profile compact baseless
package for high power cycling
capability
· Snap-on PCB assembly
· Integrated PTC substrate
temperature sensor
Doc. No. 5SYA1528-02 July 03
Maximum rated values 1)
Parameter
Symbol Conditions
Collector-emitter voltage
DC collector current
Peak collector current
Gate-emitter voltage
Total power dissipation
DC forward current
Peak forward current
Surge current
IGBT short circuit SOA
Isolation voltage
Junction temperature
Case operating temperature
Storage temperature
Mounting torques
VCES
IC
ICM
VGES
Ptot
IF
IFM
IFSM
tpsc
Visol
Tvj
Tc(op)
Tstg
M1
M2
VGE = 0 V, Tvj ³ 25 °C
Th = 60 °C
tp = 1 ms, Th = 60 °C
Th = 25 °C, per switch (IGBT)
VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave
VCC = 900 V, VCEMCHIP £ 1200 V
VGE £ 15 V, Tvj £ 125 °C
1 min, f = 50 Hz
Base-heatsink, M5 screws
Main terminals, M6 screws
1) Maximum rated values indicate limits beyond which damage to the device may occur
min
1200
-20
max
300
600
20
960
300
600
Unit
V
A
A
V
W
A
A
3600 A
10 µs
2500 V
150 °C
-40 125 °C
-40 125 °C
23
Nm
45
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

1 Page





5SNS0300U120100 pdf, ピン配列
5SNS 0300U120100
Diode characteristic values
Parameter
Symbol Conditions
Continous forward voltage 3) VF IF = 300 A
Peak reverse recovery
current
Recovered charge
Reverse recovery time
Reverse recovery energy
IRM
VCC = 600 V,
QRR
IF = 300 A,
VGE = ±15 V,
RG = 3.3 W
trr Ls = 55 nH
inductive load
Erec
3) Forward voltage is given at chip level
min typ max Unit
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
1.9 2.1
1.9
V
250
A
340
27
58
µC
120
180 ns
13
mJ
27
Thermal properties
Parameter
Symbol Conditions
min typ max Unit
IGBT thermal resistance 4)
junction to heatsink
Rth(j-h)IGBT
Heatsink: flatness < ±50 µm,
roughness < 6 µm without ridge
0.13 K/W
Diode thermal resistance 4)
junction to heatsink
Rth(j-h)DIODE
Thermal grease: conductivity ³ 0.8 W/mK,
thickness 30 µm < t < 50 µm
0.19 K/W
Temperature sensor
PTC
RT = RT0 exp [B (1/T - 1/T0)]
RT0 = 1k(±3%), B = -760 K (±2%), T0 = 298 K
Mechanical properties
Parameter
Dimensions
Clearance distance
Surface creepage distance
Weight
Mounting 4)
Symbol Conditions
min typ max Unit
L x W x H Typical , see outline drawing
184.5 x 106.5 x 34.5 mm
DC
according to IEC 60664-1 Term. to base: 9.5
and EN 50124-1
Term. to term: 11
mm
DSC
according to IEC 60664-1 Term. to base: 9.5
and EN 50124-1
Term. to term: 12.5
mm
460 gr
PCB mounting Hole for selftapping screw: 2.5 mm diameter, 6.0 mm deep
Control terminal Spring pins, pitch of pins = 4 mm, PCB thickness = 1.6 mm
4) For detailed mounting instructions refer to ABB Document No. 5SYA 2017
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1528-02 July 03
page 3 of 9


3Pages


5SNS0300U120100 電子部品, 半導体
5SNS 0300U120100
0.10
0.09
0.08
0.07
VCC = 600 V
RG = 3.3 ohm
VGE = ±15 V
Tvj = 125 °C
Ls = 55 nH
0.06
0.05
0.04
0.03
Eoff
Eon
0.02
0.01
0.00
0
ESW [mJ] = (1,74E - 4 ´ IC 2 +1,25E -1´ IC + 9,38)
100 200 300 400 500 600 700
IC [A]
Fig. 5 Typical switching energies per pulse
vs collector current
0.10
0.09
0.08
0.07
VCC = 600 V
IC = 300 A
VGE = ±15 V
Tvj = 125 °C
Ls = 55 nH
0.06
Eon
0.05
0.04
Eoff
0.03
0.02
0.01
0.00
0
5 10 15 20 25
RG [ohm]
Fig. 6 Typical switching energies per pulse
vs gate resistor
1.00
td(off)
0.10
td(on)
tr
0.01
0
tf
VCC = 600 V
RG = 3.3 ohm
VGE = ±15 V
Tvj = 125 °C
Ls = 55 nH
100 200 300 400 500 600 700
IC [ A ]
Fig. 7 Typical switching times
vs collector current
10.00
1.00
0.10
0.01
0
td(off)
td(on)
tr
tf VCC = 600 V
IC = 300 A
VGE = ±15 V
Tvj = 125 °C
Ls = 55 nH
5 10 15 20 25
RG [ohm]
Fig. 8 Typical switching times
vs gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1528-02 July 03
page 6 of 9

6 Page



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部品番号部品説明メーカ
5SNS0300U120100

IGBT Module

ABB
ABB


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