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IXTP48P05T の電気的特性と機能

IXTP48P05TのメーカーはIXYSです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXTP48P05T
部品説明 Power MOSFET ( Transistor )
メーカ IXYS
ロゴ IXYS ロゴ 




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IXTP48P05T Datasheet, IXTP48P05T PDF,ピン配置, 機能
TrenchPTM
Power MOSFETs
Preliminary Technical Information
IXTY48P05T
IXTA48P05T
IXTP48P05T
VDSS =
ID25 =
RDS(on)
- 50V
- 48A
30mΩ
P-Channel Enhancement Mode
Avalanche Rated
TO-252 (IXTY)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic body for 10s
Mounting Torque (TO-220)
TO-252
TO-263
TO-220
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS VGS = ± 15V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
© 2013 IXYS CORPORATION, All Rights Reserved
Maximum Ratings
- 50
- 50
V
V
+ 15 V
+ 25 V
- 48
-150
A
A
- 48 A
300 mJ
150 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
1.13 / 10
°C
°C
Nm/lb.in.
0.35 g
2.50 g
3.00 g
Characteristic Values
Min. Typ. Max.
- 50 V
- 2.0
- 4.5 V
±50 nA
- 10 μA
- 250 μA
30 mΩ
G
S
D (Tab)
TO-263 AA (IXTA)
G
S
D (Tab)
TO-220AB (IXTP)
GD S
D (Tab)
G = Gate D = Drain
S = Source Tab = Drain
Features
z International Standard Packages
z Avalanche Rated
z Extended FBSOA
z Fast Intrinsic Diode
z Low RDS(ON) and QG
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z High-Side Switching
z Push Pull Amplifiers
z DC Choppers
z Automatic Test Equipment
z Current Regulators
z Battery Charger Applications
DS100293A(01/13)

1 Page





IXTP48P05T pdf, ピン配列
IXTY48P05T IXTA48P05T
IXTP48P05T
-48
-44
-40
-36
-32
-28
-24
-20
-16
-12
-8
-4
0
0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGS = -10V
- 9V
- 8V
- 7V
- 6V
-0.2 -0.4 -0.6 -0.8
-1
VDS - Volts
- 5V
- 4V
-1.2 -1.4
-1.6
-48
-44
-40
-36
-32
-28
-24
-20
-16
-12
-8
-4
0
0
Fig. 3. Output Characteristics @ TJ = 125ºC
VGS = -10V
- 9V
- 8V
- 7V
- 6V
- 5V
- 4V
-0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8
VDS - Volts
-2
Fig. 5. RDS(on) Normalized to ID = - 24A Value vs.
Drain Current
1.9
VGS = -10V
1.7
TJ = 125ºC
1.5
1.3
1.1 TJ = 25ºC
0.9
0
-20
-40
-60
-80
-100
-120
-140
ID - Amperes
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
-180
VGS = -10V
-160
-140
- 9V
-120
-100
-80
- 8V
- 7V
-60
-40
-20
0
0
- 6V
- 5V
- 4V
-5 -10 -15 -20 -25 -30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = - 24A Value vs.
Junction Temperature
1.6
1.5 VGS = -10V
1.4 I D = - 48A
1.3
1.2 I D = - 24A
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125
TJ - Degrees Centigrade
150
Fig. 6. Maximum Drain Current vs.
Case Temperature
-55
-45
-35
-25
-15
-5
-50
-25
0 25 50 75 100 125 150
TC - Degrees Centigrade
© 2013 IXYS CORPORATION, All Rights Reserved


3Pages


IXTP48P05T 電子部品, 半導体
IXTY48P05T IXTA48P05T
IXTP48P05T
Fig. 19. Maximum Transient Thermal Impedance
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_48P05T(A2)10-18-10

6 Page



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部品番号部品説明メーカ
IXTP48P05T

Power MOSFET ( Transistor )

IXYS
IXYS


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