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PDF IXTY48P05T Data sheet ( Hoja de datos )
| Número de pieza | IXTY48P05T | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
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TrenchPTM
Power MOSFETs
Preliminary Technical Information
IXTY48P05T
IXTA48P05T
IXTP48P05T
VDSS =
ID25 =
≤RDS(on)
- 50V
- 48A
30mΩ
P-Channel Enhancement Mode
Avalanche Rated
TO-252 (IXTY)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic body for 10s
Mounting Torque (TO-220)
TO-252
TO-263
TO-220
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS VGS = ± 15V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
© 2013 IXYS CORPORATION, All Rights Reserved
Maximum Ratings
- 50
- 50
V
V
+ 15 V
+ 25 V
- 48
-150
A
A
- 48 A
300 mJ
150 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
1.13 / 10
°C
°C
Nm/lb.in.
0.35 g
2.50 g
3.00 g
Characteristic Values
Min. Typ. Max.
- 50 V
- 2.0
- 4.5 V
±50 nA
- 10 μA
- 250 μA
30 mΩ
G
S
D (Tab)
TO-263 AA (IXTA)
G
S
D (Tab)
TO-220AB (IXTP)
GD S
D (Tab)
G = Gate D = Drain
S = Source Tab = Drain
Features
z International Standard Packages
z Avalanche Rated
z Extended FBSOA
z Fast Intrinsic Diode
z Low RDS(ON) and QG
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z High-Side Switching
z Push Pull Amplifiers
z DC Choppers
z Automatic Test Equipment
z Current Regulators
z Battery Charger Applications
DS100293A(01/13)
1 page  
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
15.5
RG = 3Ω, VGS = -10V
VDS = - 30V
15.0
I D = - 48A
14.5
I D = - 24A
14.0
13.5
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
26
24 t r
td(on) - - - -
TJ = 125ºC, VGS = -10V
22 VDS = - 30V
20
27
26
25
24
18
I D = - 24A, - 48A
16
23
22
14 21
12 20
10 19
8 18
3 4 5 6 7 8 9 10 11 12 13 14 15
RG - Ohms
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
17 41
16
15 TJ = 25ºC, 125ºC
t f td(off) - - - -
RG = 3Ω, VGS = -10V
VDS = - 30V
38
35
14 32
13 29
12 26
11 23
-24 -26 -28 -30 -32 -34 -36 -38 -40 -42 -44 -46 -48
ID - Amperes
IXTY48P05T IXTA48P05T
IXTP48P05T
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
16.0
15.5
RG = 3Ω, VGS = -10V
VDS = - 30V
15.0 TJ = 25ºC
14.5
14.0
TJ = 125ºC
13.5
13.0
-24 -26 -28 -30 -32 -34 -36 -38 -40 -42 -44 -46 -48
ID - Amperes
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
18 38
t f td(off) - - - -
17 RG = 3Ω, VGS = -10V
VDS = - 30V
16
36
34
15 32
14
I D = - 48A, - 24A
30
13 28
12 26
11 24
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
35
t f td(off) - - - -
30 TJ = 125ºC, VGS = -10V
VDS = - 30V
25
70
60
50
20 I D = - 24A
40
15
10 I D = - 48A
30
20
5 10
3 4 5 6 7 8 9 10 11 12 13 14 15
RG - Ohms
© 2013 IXYS CORPORATION, All Rights Reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXTY48P05T.PDF ] | |
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