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PDF IXTQ48N20T Data sheet ( Hoja de datos )
| Número de pieza | IXTQ48N20T | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
| Logotipo |  |
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TrenchTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXTA48N20T
IXTP48N20T
IXTQ48N20T
Symbol
VDSS
VDGR
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
MFCd
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
TC = 25°C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Force (TO-263)
Mounting Torque (TO-220 & TO-3P)
TO-263
TO-220
TO-3P
Maximum Ratings
200
200
V
V
± 30 V
48 A
130 A
5A
500 mJ
3
250
-55 ... +175
175
-55 ... +175
300
260
10..65/2.2..14.6
1.13/10
2.5
3.0
5.5
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in
Nm/lb.in
g
g
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
200 V
2.5 4.5 V
± 100 nA
5 μA
250 μA
40 50 mΩ
VDSS = 200V
ID25 = 48A
RDS(on) ≤ 50mΩ
TO-263 AA (IXTA)
G
S
D (Tab)
TO-220AB (IXTP)
GD S
TO-3P (IXTQ)
D (Tab)
G
D
S
G = Gate
S = Source
D (Tab)
D = Drain
Tab = Drain
Features
z High Current Handling Capability
z Avalanche Rated
z Fast Intrinsic Rectifier
z Low RDS(on)
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z DC-DC Converters
z Battery Chargers
z Switch-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z AC Motor Drives
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
© 2010 IXYS CORPORATION, All Rights Reserved
DS99948A(02/10)
1 page  
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
32
RG = 5Ω , VGS = 15V
28 VDS = 100V
24 I D = 48A
20 I D = 24A
16
12
8
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
22
t r td(on) - - - -
20 TJ = 125ºC, VGS = 15V
VDS = 100V
18
I D = 48A
22
21
20
16 19
I D = 24A
14 18
12 17
10 16
4 6 8 10 12 14 16 18 20
RG - Ohms
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
32
t f td(off) - - - -
30 RG = 5Ω, VGS = 15V
VDS = 100V
28
TJ = 25ºC
26
TJ = 125ºC
24
TJ = 125ºC
22
20 TJ = 25ºC
68
64
60
56
52
48
44
18 40
10 15 20 25 30 35 40 45 50
ID - Amperes
© 2010 IXYS CORPORATION, All Rights Reserved
IXTA48N20T IXTP48N20T
IXTQ48N20T
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
34
RG = 5Ω , VGS = 15V
30 VDS = 100V
26 TJ = 25ºC
22
18
14
10 TJ = 125ºC
6
10 15 20 25 30 35 40 45
ID - Amperes
50
38
36
34
32
30
28
26
24
22
20
18
25
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
t f td(off) - - - -
RG = 5Ω, VGS = 15V
VDS = 100V
I D = 24A
I D = 48A
35 45 55 65 75 85 95 105 115
TJ - Degrees Centigrade
62
60
58
56
54
52
50
48
46
44
42
125
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
66 160
t f td(off) - - - -
58 TJ = 125ºC, VGS = 15V
VDS = 100V
50
I D = 24A
140
120
42
I D = 48A
100
34 80
26 60
18 40
4 6 8 10 12 14 16 18 20
RG - Ohms
IXYS REF: T_48N20T(4W)02-12-10-A
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTQ48N20T.PDF ] | |
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