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PDF IXTQ460P2 Data sheet ( Hoja de datos )
| Número de pieza | IXTQ460P2 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
| Logotipo |  |
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PolarP2TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-263 AA (IXTA)
IXTA460P2
IXTP460P2
IXTQ460P2
IXTH460P2
TO-220AB (IXTP)
VDSS
ID25
RDS(on)
trr(typ)
=
=
≤
=
500V
24A
270mΩ
400ns
TO-3P (IXTQ)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
FC
Md
Weight
G
S
D (Tab)
GD S
D (Tab)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
Maximum Ratings
500
500
± 30
± 40
V
V
V
V
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
24
50
12
750
15
480
-55 ... +150
150
-55 ... +150
A
A
A
mJ
V/ns
W
°C
°C
°C
Maximum Lead Temperature for Soldering
Plastic Body for 10s
300 °C
260 °C
Mounting Force TO-263
10..65 / 2.2..14.6
Mounting Torque (TO-220, TO-3P & TO-247) 1.13 / 10
Nm/lb.in.
Nm/lb.in.
TO-263
TO-220
TO-3P
TO-247
2.5 g
3.0 g
5.5 g
6.0 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 30V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
500 V
2.5 4.5 V
± 100 nA
25 μA
250 μA
270 mΩ
G
D
S
D (Tab)
TO-247 (IXTH)
G
DS
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z Avalanche Rated
z Fast Intrinsic Diode
z Dynamic dv/dt Rated
z Low Package Inductance
Advantages
z High Power Density
z Easy to Mount
z Space Savings
Applications
z Switch-Mode and Resonant-Mode
Power Supplies
z DC-DC Converters
z Laser Drivers
z AC and DC Motor Drives
z Robotics and Servo Controls
© 2010 IXYS CORPORATION, All Rights Reserved
DS100216B(06/10)
1 page  
IXTA460P2 IXTP460P2
IXTQ460P2 IXTH460P2
Fig. 7. Input Admittance
35
30
25
TJ = 125ºC
25ºC
20 - 40ºC
15
10
5
0
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
VGS - Volts
Fig. 8. Transconductance
50
TJ = - 40ºC
40
25ºC
30
125ºC
20
10
0
0 5 10 15 20 25 30 35
ID - Amperes
80
70
60
50
40
30
20
10
0
0.3
Fig. 9. Forward Voltage Drop of Intrinsic Diode
TJ = 125ºC
TJ = 25ºC
0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD - Volts
1.1
10
VDS = 250V
I D = 12A
8 I G = 10mA
6
Fig. 10. Gate Charge
4
2
0
0 5 10 15 20 25 30 35 40 45 50
QG - NanoCoulombs
10,000
Fig. 11. Capacitance
1,000
Ciss
Coss
100
f = 1 MHz
10
Crss
0 5 10 15 20 25 30 35 40
VDS - Volts
Fig. 12. Forward-Bias Safe Operating Area
100
RDS(on) Limit
25µs
10
100µs
1
0.1 TJ = 150ºC
TC = 25ºC
Single Pulse
0.01
10
100
VDS - Volts
1ms
10ms
1000
© 2010 IXYS CORPORATION, All Rights Reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXTQ460P2.PDF ] | |
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