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Datasheet HFW50N06A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | HFW50N06A | N-Channel MOSFET HFW50N06A
Oct 2015
HFW50N06A
60V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 27 nC (Typ.) Extended Safe Operating |  SemiHow | mosfet |
HFW Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | HFW10N60 | N-Channel MOSFET HFW10N60
Sep 2009
HFW10N60
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ = 0.64 Ω ID = 9.5 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled SemiHow mosfet | | |
| 2 | HFW10N60S | N-Channel MOSFET HFW10N60S
May 2010
HFW10N60S
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 9.5 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gat SemiHow mosfet | | |
| 3 | HFW10N60U | N-Channel MOSFET HFW10N60U_HFI10N60U
HFW10N60U / HFI10N60U
600V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended S SemiHow mosfet | | |
| 4 | HFW10N65S | N-Channel MOSFET HFW10N65S
July 2016
HFW10N65S
650V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ ȍ ID = 9.2 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Ga SemiHow mosfet | | |
| 5 | HFW11N40 | 400V N-Channel MOSFET HFW11N40
Dec 2005
HFW11N40
400V N-Channel MOSFET
BVDSS = 400 V RDS(on) typ ȍ ID = 11.4 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate SemiHow mosfet | | |
| 6 | HFW1230K00 | Relay CII Technology relay | | |
| 7 | HFW12N60S | N-Channel MOSFET HFW12N60S
Jan 2013
HFW12N60S
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ = 0.53 ȍ ID = 12 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate SemiHow mosfet | |
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