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HFP4N60FのメーカーはSemiHowです、この部品の機能は「600V N-Channel MOSFET」です。 |
部品番号 | HFP4N60F |
| |
部品説明 | 600V N-Channel MOSFET | ||
メーカ | SemiHow | ||
ロゴ | |||
このページの下部にプレビューとHFP4N60Fダウンロード(pdfファイル)リンクがあります。 Total 7 pages
July 2015
HFP4N60F
600V N-Channel MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 8.5 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 2.6 ȍ7\S#9GS=10V
100% Avalanche Tested
BVDSS = 600 V
RDS(on) typ ȍ
ID = 4 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
PD
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TC = 25)
- Derate above 25
600
4.0
2.5
16
ρ30
70
4
11
110
0.88
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
W
W/
Thermal Resistance Characteristics
Symbol
RșJC
RșCS
RșJA
Parameter
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
1.15
--
62.5
Units
/W
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͑͢͡
1 Page Typical Characteristics
101
VGS
Top : 10.0 V
9.0 V
8.0 V
7.0 V
6.0 V
5.0 V
Bottom : 4.0 V
100
10-1
100
* Notes :
1. 300us Pulse Test
2. T = 25oC
C
101
V , Drain-Source Voltage [V]
DS
Figure 1. On Region Characteristics
8
6
VGS = 10V
4
2 VGS = 20V
* Note : TJ = 25oC
0
012345678
ID, Drain Current[A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
600
C = C + C (C = shorted)
iss gs gd ds
Coss = Cds + Cgd
500
C Crss = Cgd
iss
400
Coss
300
200 * Note ;
1. VGS = 0 V
Crss 2. f = 1 MHz
100
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10
25oC
1
150oC
-25oC
* Notes :
1. V = 30V
DS
2. 300us Pulse Test
0.1
2 3 4 5 6 7 8 9 10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10
1
150oC 25oC
0.1
0.2
* Notes :
1. VGS= 0V
2. 300us Pulse Test
0.4 0.6 0.8 1.0
VSD, Source-Drain Voltage [V]
1.2
1.4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
VDS = 120V
VDS = 300V
8 VDS = 480V
6
4
2
* Note : ID = 4.0A
0
0 2 4 6 8 10
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͑͢͡
3Pages Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• IS controlled by pulse period
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͑͢͡
6 Page | |||
ページ | 合計 : 7 ページ | ||
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部品番号 | 部品説明 | メーカ |
HFP4N60 | N-Channel MOSFET | SemiHow |
HFP4N60F | 600V N-Channel MOSFET | SemiHow |