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PDF BT169D Data sheet ( Hoja de datos )

Número de pieza BT169D
Descripción Thyristors
Fabricantes Inchange Semiconductor 
Logotipo Inchange Semiconductor Logotipo



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No Preview Available ! BT169D Hoja de datos, Descripción, Manual

INCHANGE Semiconductor
isc Thyristors
isc Product Specification
BT169D
FEATURES
·With TO-92 package
·Sensitive gate trigger current
·Low reverse and forward blocking current
·Low holding current
·For general purpose switching and phase control applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VDRM
VRRM
IT(AV)
IT(RMS)
PGM
PG(AV)
ITSM
Tj
Tstg
Repetitive peak off-state voltage
Repetitive peak off-state voltage
Average on-state current
RMS on-state current
Peak gate power
Average gate power
Non-repetitive peak on-state current
Operating junction temperature
Storage temperature
MIN
400
400
0.5
0.8
2
0.1
8
125
-40~+ 150
UNIT
V
V
A
A
W
W
A
ELECTRICAL CHARACTERISTICS (TC=25unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
VDRM
VRRM
IRRM
IDRM
IGT
VTM
IH
VGT
Repetitive peak off-state voltage ID=0.1mA
Repetitive peak reverse voltage ID=0.5mA
Repetitive peak reverse current VRRM=400V
Repetitive peak off-state current VDRM=400V
Gate trigger current
VD= 12V; IT= 10mA
On-state voltage
IT=1.2A
Holding current
IGT=0.5mA ,VD=12V
Gate trigger voltage
VD= 12V; IT= 10mA
MIN MAX UNIT
400 V
400 V
10 μA
10 μA
200 μA
1.7 V
5 mA
0.8 V
isc websitewww.iscsemi.cn

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