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GA10JT06-CAL の電気的特性と機能

GA10JT06-CALのメーカーはGeneSiCです、この部品の機能は「OFF Silicon Carbide Junction Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 GA10JT06-CAL
部品説明 OFF Silicon Carbide Junction Transistor
メーカ GeneSiC
ロゴ GeneSiC ロゴ 




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GA10JT06-CAL Datasheet, GA10JT06-CAL PDF,ピン配置, 機能
Die Datasheet
GA10JT06-CAL
Normally – OFF Silicon Carbide
Junction Transistor
Features
210°C maximum operating temperature
Gate Oxide Free SiC switch
Exceptional Safe Operating Area
Excellent Gain Linearity
Temperature Independent Switching Performance
Low Output Capacitance
Positive Temperature Co-efficient of RDS,ON
Suitable for connecting an anti-parallel diode
VDS
RDS(ON)
ID @ 25 oC
hFE
=
=
=
=
600 V
120 mΩ
25 A
120
Die Size = 2.10 mm x 2.10 mm
Advantages
Compatible with Si MOSFET/IGBT gate-drivers
> 20 µs Short-Withstand Capability
Lowest-in-class Conduction Losses
High Circuit Efficiency
Minimal Input Signal Distortion
High Amplifier Bandwidth
Applications
Down Hole Oil Drilling, Geothermal Instrumentation
Hybrid Electric Vehicles (HEV)
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Induction Heating
Uninterruptible Power Supply (UPS)
Motor Drives
Absolute Maximum Ratings (TC = 25 oC unless otherwise specified)
Parameter
Symbol
Conditions
Drain – Source Voltage
Continuous Drain Current
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
VDS
ID
ID
IGM
RBSOA
SCSOA
VGS = 0 V
TC = 25°C
TC > 125°C, assumes RthJC < 0.88 oC/W
TVJ = 210 oC,
Clamped Inductive Load
TVJ = 210 oC, IG = 1 A, VDS = 400 V,
Non Repetitive
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Operating Junction and Storage
Temperature
VSG
VSD
Tj, Tstg
Maximum Processing Temperature
TProc
10 min. maximum
Value
600
25
10
1.3
ID,max = 10
@ VDS ≤ VDSmax
> 20
30
25
-55 to 210
325
Unit
V
A
A
A
A
µs
V
V
°C
°C
Notes
Electrical Characteristics
Parameter
On State Characteristics
Drain – Source On Resistance
Gate – Source Saturation Voltage
DC Current Gain
Off State Characteristics
Drain Leakage Current
Gate Leakage Current
Symbol
Conditions
RDS(ON)
VGS,SAT
hFE
ID = 10 A, Tj = 25 °C
ID = 10 A, Tj = 125 °C
ID = 10 A, Tj = 175 °C
ID = 10 A, Tj = 210 °C
ID = 10 A, ID/IG = 40, Tj = 25 °C
ID = 10 A, ID/IG = 30, Tj = 175 °C
VDS = 5 V, ID = 10 A, Tj = 25 °C
VDS = 5 V, ID = 10 A, Tj = 125 °C
VDS = 5 V, ID = 10 A, Tj = 175 °C
VDS = 10 V, ID = 10 A, Tj = 210 °C
VR = 600 V, VGS = 0 V, Tj = 25 °C
IDSS VR = 600 V, VGS = 0 V, Tj = 125 °C
VR = 600 V, VGS = 0 V, Tj = 210 °C
ISG VSG = 20 V, Tj = 25 °C
Min.
Value
Typical
Max. Unit
Notes
120
180
240
Fig. 5
320
3.50
3.27
V Fig. 4
120
87
80
– Fig. 5
76
10
50 μA Fig. 6
100
20 nA
Feb 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
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GA10JT06-CAL pdf, ピン配列
Die Datasheet
GA10JT06-CAL
Driving the GA10JT06-CAL
Drive Topology
TTL Logic
Constant Current
High Speed – Boost Capacitor
High Speed – Boost Inductor
Proportional
Pulsed Power
Gate Drive Power
Consumption
High
Medium
Medium
Low
Lowest
Medium
Switching
Frequency
Low
Medium
High
High
High
N/A
Application Emphasis
Wide Temperature Range
Wide Temperature Range
Fast Switching
Ultra Fast Switching
Wide Drain Current Range
Pulse Power
Availability
Coming Soon
Coming Soon
Production
Coming Soon
Coming Soon
Coming Soon
A: Static TTL Logic Driving
The GA10JT06-CAL may be driven using direct (5 V) TTL logic after current amplification. The (amplified) current level of the supply must
meet or exceed the steady state gate current (IG,steady) required to operate the GA10JT06- CAL. The power level of the supply can be
estimated from the target duty cycle of the particular application. IG,steady is dependent on the anticipated drain current ID through the SJT and
the DC current gain hFE, it may be calculated from the following equation. An accurate value of the hFE may be read from Figure 5.
������������������������ ,������������������������������������������������������������������������
������������������������
������������������������ (������������,
������������������������ )
1.5
TTL
Gate Signal
5/0V
TTL i/p
5V
IG,steady
SiC SJT
G
D
S
Figure 7: TTL Gate Drive Schematic
B: High Speed Driving
The SJT is a current controlled transistor which requires a positive gate current for turn-on as well as to remain in on-state. An ideal gate
current waveform for ultra-fast switching of the SJT, while maintaining low gate drive losses, is shown in Figure 8 which features a positive
current peak during turn-on, a negative current peak during turn-off, and continuous gate current to remain on.
Figure 8: An idealized gate current waveform for fast switching of an SJT.
An SJT is rapidly switched from its blocking state to on-state, when the necessary gate charge, QG, for turn-on is supplied by a burst of high
gate current, IG,on, until the gate-source capacitance, CGS, and gate-drain capacitance, CGD, are fully charged.
������������������������������������ = ������������������������,������������������������ ∗ ������������1
������������������������������������ ≥ ������������������������������������ + ������������������������������������
Feb 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Pg3 of 8


3Pages


GA10JT06-CAL 電子部品, 半導体
Die Datasheet
GA10JT06-CAL
C: Proportional Gate Current Driving
For applications in which the GA10JT06- CAL will operate over a wide range of drain current conditions, it may be beneficial to drive the
device using a proportional gate drive topology to optimize gate drive power consumption. A proportional gate driver relies on instantaneous
drain current ID feedback to vary the steady state gate current IG,steady supplied to the GA10JT06- CAL
C:1: Voltage Controlled Proportional Driver
The voltage controlled proportional driver relies on a gate drive IC to detect the GA10JT06- CAL drain-source voltage VDS during on-state to
sense ID. The gate drive IC will then increase or decrease IG,steady in response to ID. This allows IG,steady, and thus the gate drive power
consumption, to be reduced while ID is relatively low or for IG,steady to increase when is ID higher. A high voltage diode connected between the
drain and sense protects the IC from high-voltage when the driver and GA10JT06- CAL are in off-state. A simplified version of this topology is
shown in Figure13, additional information will be available in the future at http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Gate Signal
Sense
Proportional
Gate Current
Driver
Signal
Output
HV Diode
IG,steady
G
SiC SJT
D
S
Figure 13: Simplified Voltage Controlled Proportional Driver
C:2: Current Controlled Proportional Driver
The current controlled proportional driver relies on a low-loss transformer in the drain or source path to provide feedback ID of the GA10JT06-
CAL during on-state to supply IG,steady into the device gate. IG,steady will then increase or decrease in response to ID at a fixed forced current gain
which is set be the turns ratio of the transformer, hforce = ID / IG = N2 / N1. GA10JT06- CAL is initially tuned-on using a gate current pulse
supplied into an RC drive circuit to allow ID current to begin flowing. This topology allows IG,steady, and thus the gate drive power consumption,
to be reduced while ID is relatively low or for IG,steady to increase when is ID higher. A simplified version of this topology is shown in Figure14,
additional information will be available in the future at http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/.
Feb 2015
Gate Signal
N2
SiC SJT D
G
S
N3 N1
N2
Figure 14: Simplified Current Controlled Proportional Driver
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
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部品番号部品説明メーカ
GA10JT06-CAL

OFF Silicon Carbide Junction Transistor

GeneSiC
GeneSiC


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