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IRF3717PBF-1 の電気的特性と機能

IRF3717PBF-1のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF3717PBF-1
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF3717PBF-1 Datasheet, IRF3717PBF-1 PDF,ピン配置, 機能
IRF3717PbF-1
HEXFET® Power MOSFET
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
ID
(@TA = 25°C)
Applications
20 V
4.4 mΩ
22 nC
20 A
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
l Synchronous MOSFET for Notebook Processor Power
l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number Package Type
IRF3717PbF-1
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF3717PbF-1
IRF3717TRPbF-1
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
20
± 20
20
16
160
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
fRθJL Junction-to-Drain Lead
RθJA Junction-to-Ambient
Notes  through „ are on page 10
Typ.
–––
–––
Max.
20
50
Units
°C/W
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
July 25, 2014

1 Page





IRF3717PBF-1 pdf, ピン配列
IRF3717PbF-1
1000
100
10
TOP
BOTTOM
VGS
10V
4.5V
3.8V
3.5V
3.3V
3.0V
2.8V
2.5V
1
0.1
0.1
20μs PULSE WIDTH
Tj = 25°C
2.5V
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
TOP
BOTTOM
VGS
10V
4.5V
3.8V
3.5V
3.3V
3.0V
2.8V
2.5V
10
1
0.1
2.5V
20μs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100
1.5
ID = 20A
VGS = 10V
TJ = 150°C
10
1.0
TJ = 25°C
1
VDS = 10V
20μs PULSE WIDTH
0.1
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS, Gate-to-Source Voltage (V)
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
vs. Temperature
3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
July 25, 2014


3Pages


IRF3717PBF-1 電子部品, 半導体
IRF3717PbF-1
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
150
100
50
ID
TOP 6.5A
7.5A
BOTTOM 16A
V(BR)DSS
tp
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
LD
VDS
+
VDD -
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2μF
.3μF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13. Gate Charge Test Circuit
VGS
Pulse Width < 1μs
Duty Factor < 0.1%
D.U.T
Fig 14a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 14b. Switching Time Waveforms
6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
July 25, 2014

6 Page



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部品番号部品説明メーカ
IRF3717PBF-1

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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