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PDF KTB817 Data sheet ( 特性 )

部品番号 KTB817
部品説明 TRIPLE DIFFUSED PNP TRANSISTOR
メーカ KEC
ロゴ KEC ロゴ 

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KTB817 Datasheet, KTB817 PDF,ピン配置, 機能
SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
Complementary to KTD1047.
Recommended for 60W Audio Frequency
Amplifier Output Stage.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
RATING
-160
-140
-6
-12
-15
100
150
-55 150
UNIT
V
V
V
A
W
KTB817
TRIPLE DIFFUSED PNP TRANSISTOR
AQ
B
K
D
d
PP
1 23
1. BASE
DIM MILLIMETERS
A 15.9 MAX
B 4.8 MAX
C 20.0+_ 0.3
D 2.0+_ 0.3
d 1.0+0.3/-0.25
E 2.0
F 1.0
G 3.3 MAX
H 9.0
I 4.5
T MJ
2.0
K 1.8 MAX
L 20.5+_ 0.5
M 2.8
P 5.45+_ 0.2
Q Φ3.2+_ 0.2
T 0.6+0.3/-0.1
2. COLLECTOR (HEAT SINK)
3. EMITTER
TO-3P(N)
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Emitter Cut-off Current
IEBO
DC Current Gain
hFE (1) (Note)
hFE 2
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Voltage
VBE
Transition Frequency
fT
Output Capacitance
Cob
Turn On Time
ton
Fall Time
tf
Storage Time
tstg
Note : hFE(1) Classification O:60 120, Y:100 200
TEST CONDITION
VCB=-80V, IE=0
VEB=-4V, IC=0
VCE=-5V, IC=-1A
VCE=-5V, IC=-6A
IC=-5A, IB=-0.5A
VCE=-5V, IC=-1A
VCE=-5V, IC=-1A
VCB=-10V, IE=0, f=1MHz
VCC=-20V
IC=1A=10
RL=20
IB1=-10
IB2
MIN.
-
-
60
20
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
15
300
0.25
0.53
1.61
MAX.
-0.1
-0.1
200
-2.5
-1.5
-
-
-
-
-
UNIT
mA
mA
V
V
MHz
pF
S
2002. 12. 11
Revision No : 2
1/3

1 Page





KTB817 pdf, ピン配列
KTB817
Cob - V CB
1k
f=1MHz
500
300
100
50
30
10
-1 -3 -10 -30 -100
COLLECTOR-BASE VOLTAGE VCB (V)
SAFE OPERATING AREA
-100
-50
-30
-10
-5
DC
-3
-1
-0.5
-0.3
-0.1
-1
-3 -10 -30 -100 -300 -1k
COLLECTOR-EMITTER VOLTAGE VCE (V)
2002. 12. 11
Revision No : 2
3/3


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