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KF16N25F の電気的特性と機能

KF16N25FのメーカーはKECです、この部品の機能は「N CHANNEL MOS FIELD EFFECT TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 KF16N25F
部品説明 N CHANNEL MOS FIELD EFFECT TRANSISTOR
メーカ KEC
ロゴ KEC ロゴ 




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KF16N25F Datasheet, KF16N25F PDF,ピン配置, 機能
SEMICONDUCTOR
TECHNICAL DATA
KF16N25F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for DC/DC Converters
and switching mode power supplies.
FEATURES
VDSS= 250V, ID= 16A
Drain-Source ON Resistance : RDS(ON)=0.24
Qg(typ) = 21nC
@VGS = 10V
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
250
30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
ID
IDP
EAS
EAR
dv/dt
PD
16*
10*
39*
200
4.7
4.5
41.7
0.33
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Tj
Tstg
150
-55 150
Thermal Resistance, Junction-to-Case RthJC
3.0
Thermal Resistance, Junction-to-
Ambient
RthJA
110
* : Drain Current limited by maximum junction temperature.
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
AC
E
LM
D
NN
R
H
123
1. GATE
2. DRAIN
3. SOURCE
*Single Gauge Lead Frame
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
TO-220IS (1)
PIN CONNECTION
D
G
S
2014. 12. 01
Revision No : 1
1/6

1 Page





KF16N25F pdf, ピン配列
KF16N25F
Fig1. ID - VDS
100
VGS=10V
VGS=7V
10
VGS=5V
1
0.1
0.1
1 10
Drain - Source Voltage VDS (V)
100
1.2
VGS = 0V
IDS = 250
1.1
Fig3. BVDSS - Tj
1.0
0.9
0.8
-100
-50 0 50 100
Junction Temperature Tj ( C )
150
Fig5. IS - VSD
102
101
TC=100 C
25 C
100
10-1
0.2
0.4 0.6 0.8 1.0 1.2
Source - Drain Voltage VSD (V)
1.4
2014. 12. 01
Revision No : 1
102
VDS=20V
Fig2. ID - VGS
TC=100 C
101
25 C
100
0
2468
Gate - Source Voltage VGS (V)
10
Fig4. RDS(ON) - ID
1.2
1.0
0.8
VGS=5V
0.6
0.4
VGS=7V
0.2
VGS=10V
0
0 8 16 24 32 40
Drain Current ID (A)
3.0
VGS =10V
2.5 IDS = 8A
Fig6. RDS(ON) - Tj
2.0
1.5
1.0
0.5
0.0
-100 -50 0 50 100
Junction Temperature Tj ( C)
150
3/6


3Pages


KF16N25F 電子部品, 半導体
KF16N25F
Fig14. Source - Drain Diode Reverse Recovery and dv /dt
IF
0.5 VDSS
10V
DUT
driver
VGS
VDS
ISD
(DUT)
IS
Body Diode Forword Current
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forword Voltage drop
2014. 12. 01
Revision No : 1
6/6

6 Page



ページ 合計 : 6 ページ
 
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共有リンク

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部品番号部品説明メーカ
KF16N25D

N CHANNEL MOS FIELD EFFECT TRANSISTOR

KEC
KEC
KF16N25F

N CHANNEL MOS FIELD EFFECT TRANSISTOR

KEC
KEC


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