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PDF 2N7002A Data sheet ( Hoja de datos )
| Número de pieza | 2N7002A | |
| Descripción | FIELD EFFECT TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES
High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capablity.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Drain-Source Voltage
Drain-Gate Voltage (RGS 1 )
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Drain Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VDSS
VDGR
VGSS
ID
IDP
PD
Tj
Tstg
RATING
60
60
20
115
800
200
150
-55 150
UNIT
V
V
V
mA
mW
2N7002A
N CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
E
L BL
DIM MILLIMETERS
A 2.93+_ 0.20
B 1.30+0.20/-0.15
23
C 1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
P7
Q 0.1 MAX
M
1. SOURCE
2. GATE
3. DRAIN
SOT-23
EQUIVALENT CIRCUIT
Marking
WBType Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
SYMBOL
BVDSS
IDSS
IGSSF
IGSSR
TEST CONDITION
VGS=0V, ID=10 A
VDS=60V, VGS=0V
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
MIN.
60
-
-
-
TYP.
-
-
-
-
MAX.
-
1
1
-1
UNIT
V
A
A
A
2009. 11. 17
Revision No : 8
1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2N7002A.PDF ] | |
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