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PDF KTA1241 Data sheet ( Hoja de datos )
| Número de pieza | KTA1241 | |
| Descripción | EPITAXIAL PLANAR PNP TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
STROBO FLASH APPLICATION.
HIGH CURRENT APPLICATION.
FEATURES
hFE=100 320 (VCE=-2V, IC=-0.5A).
hFE=70(Min.) (VCE=-2V, IC=-4A).
Low Collector Saturation Voltage.
: VCE(sat)=-0.5V (IC=-3A, IB=-75mA).
High Power Dissipation : PC=1W.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
RATING
-35
-20
-8
-5
-0.5
1
150
-55 150
UNIT
V
V
V
A
A
W
KTA1241
EPITAXIAL PLANAR PNP TRANSISTOR
BD
P
DEPTH:0.2
C
Q
K
FF
HH
M EM
123
HL
NN
1. EMITTER
2. COLLECTOR
3. BASE
DIM MILLIMETERS
A 7.20 MAX
B 5.20 MAX
S C 0.60 MAX
D 2.50 MAX
E 1.15 MAX
F 1.27
G 1.70 MAX
H 0.55 MAX
J 14.00+_ 0.50
K
H
L
0.35 MIN
0.75+_ 0.10
M4
N 25
O 1.25
P Φ1.50
Q 0.10 MAX
R 12.50 +_ 0.50
S 1.00
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
ICBO
IEBO
V(BR)CEO
V(BR)EBO
hFE(1) (Note)
hFE(2)
VCE(sat)
VBE
fT
VCB=-35V, IE=0
VEB=-8V, IC=0
IC=-10mA, IB=0
IE=-1mA, IC=0
VCE=-2V, IC=-0.5A
VCE=-2V, IC=-4A
IC=-3A, IB=-75mA
VCE=-2V, IC=-4A
VCE=-2V, IC=-0.5A
Collector Output Capacitance
Cob VCB=-10V, IE=0, f=1MHz
Note : hFE Classification O:100 200, Y:160 320
MIN.
-
-
-20
-8
100
70
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
170
62
MAX.
-100
-100
-
-
320
-
-0.5
-1.5
-
-
UNIT
nA
nA
V
V
V
V
MHz
pF
1994. 3. 23
Revision No : 0
1/2
1 page | ||
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