(PDF) MTN1012ZC3 Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	MTN1012ZC3
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	CYStech
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No Preview Available ! CYStech Electronics Corp. Spec. No. : C588C3 Issued Date : 2011.01.05 Revised Date : Page No. : 1/7 ESD protected N-CHANNEL Enhancement Mode MOSFET MTN1012ZC3 BVDSS 20V ID 0.7A 300mΩ@4.5V/0.6A Description • Low voltage drive, 1.8V • Easy to use in parallel • High speed switching • ESD protected device • Pb-free package RDSON(TYP) 340mΩ@2.5V/0.5A 420mΩ@1.8V/0.4A Symbol MTN1012ZC3 Outline SOT-523 D G：Gate S：Source D：Drain GS Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25°C TA=70°C Pulsed Drain Current Total Power Dissipation TA=25°C TA=70°C Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Ambient Note : 1. Pulse Width ≤ 300μs, Duty cycle ≤2% Symbol BVDSS VGS ID IDM PD Tj ; Tstg Rth,ja Limits 20 ±12 0.7 0.4 1 1 270 160 -55~+150 463 Unit V V A A mW °C °C/W MTN1012ZC3 CYStek Product Specification 1 page Reel Dimension CYStech Electronics Corp. Spec. No. : C588C3 Issued Date : 2011.01.05 Revised Date : Page No. : 5/7 Carrier Tape Dimension MTN1012ZC3 CYStek Product Specification 5 Page

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PDF MTN1012ZC3 Data sheet ( Hoja de datos )