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PDF TMPF5N50G Data sheet ( Hoja de datos )

Número de pieza TMPF5N50G
Descripción N-channel MOSFET
Fabricantes TRinno 
Logotipo TRinno Logotipo



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No Preview Available ! TMPF5N50G Hoja de datos, Descripción, Manual

Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
Fast reverse recovery
TMP5N50/TMPF5N50
TMP5N50G/TMPF5N50G
VDSS = 550 V @Tjmax
ID = 4.5A
RDS(ON) = 1.65 W(max) @ VGS= 10 V
D
G
Device
TMP5N50 / TMPF5N50
TMP5N50G / TMPF5N50G
Package
TO-220 / TO-220F
TO-220 / TO-220F
S
Marking
TMP5N50 / TMPF5N50
TMP5N50G / TMPF5N50G
Remark
RoHS
Halogen Free
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25
TC = 100
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25
Derate above 25
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMP5N50(G) TMPF5N50(G)
500
±30
4.5 4.5 *
2.86 2.86 *
18 18*
240
4.5
9.25
92.5 32
0.74 0.25
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/
V/ns
Thermal Characteristics
Parameter
Symbol
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
RqJC
RqJA
August 2010 : Rev1
www.trinnotech.com
TMP5N50(G)
1.35
62.5
TMPF5N50(G)
3.9
62.5
Unit
/W
/W
1/5

1 page




TMPF5N50G pdf
TMP5N50/TMPF5N50
TMP5N50G/TMPF5N50G
TMP5N50(G)
100 Duty=0.5
0.2
0.1
10-1 0.05
0.02
0.01
10-2
10-5
10-4
single pulse
PDM
t
T
Duty = t/T
Z (t) = 1.35 /W Max.
thJC
10-3
10-2
10-1
100
101
Pulse Width, t [sec]
Duty=0.5
100 0.2
0.1
0.05
10-1 0.02
0.01
10-2
10-5
10-4
TMPF5N50(G)
single pulse
PDM
t
T
Duty = t/T
Z (t) = 3.9 /W Max.
thJC
10-3
10-2
10-1
100
101
Pulse Width, t [sec]
August 2010 : Rev1
www.trinnotech.com
5/5

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