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PDF TMPF9N50G Data sheet ( Hoja de datos )
| Número de pieza | TMPF9N50G | |
| Descripción | N-channel MOSFET | |
| Fabricantes | TRinno | |
| Logotipo |  |
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Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
TMP9N50/TMPF9N50
TMP9N50G/TMPF9N50G
VDSS = 550 V @Tjmax
ID = 9A
RDS(on) = 0.85 W(max) @ VGS= 10 V
D
G
S
Device
TMP9N50 / TMPF9N50
TMP9N50G / TMPF9N50G
Package
TO-220 / TO-220F
TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25 ℃
TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃
Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMP9N50 / TMPF9N50
TMP9N50G / TMPF9N50G
Remark
RoHS
Halogen Free
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMP9N50(G) TMPF9N50(G)
500
±30
9 9*
5.3 5.3 *
36 36*
364
9
14.3
143 46.6
1.16 0.37
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/℃
V/ns
℃
℃
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
July 2010 : Rev1
www.trinnotech.com
TMP9N50(G)
0.87
62.5
TMPF9N50(G)
2.68
62.5
Unit
℃/W
℃/W
1/5
1 page  
TMP9N50/TMPF9N50
TMP9N50G/TMPF9N50G
100
Duty=0.5
0.2
10-1 0.1
0.05
0.02
0.01
10-2
10-5
10-4
TMP9N50(G)
single pulse
PDM
t
T
Duty = t/T
Z (t) = 0.87 ℃/W Max.
thJC
10-3
10-2
10-1
100
101
Pulse Width, t [sec]
TMPF9N50(G)
Duty=0.5
100
0.2
0.1
0.05
10-1 0.02
0.01
10-2
10-5
10-4
single pulse
PDM
t
T
Duty = t/T
Z (t) = 2.68 ℃/W Max.
thJC
10-3
10-2
10-1
100
101
Pulse Width, t [sec]
July 2010 : Rev1
www.trinnotech.com
5/5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet TMPF9N50G.PDF ] | |
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