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Datasheet TMD4N65AZ Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1TMD4N65AZN-channel MOSFET

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK TMD4N65AZ(G)/TMU4N65AZ(G) BVDSS 650V N-channel MOSFET ID RDS(on) 4.0A < 2.4W I-PAK Device TMD4N65AZ / TM
TRinno
TRinno
mosfet
2TMD4N65AZGN-channel MOSFET

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK TMD4N65AZ(G)/TMU4N65AZ(G) BVDSS 650V N-channel MOSFET ID RDS(on) 4.0A < 2.4W I-PAK Device TMD4N65AZ / TM
TRinno
TRinno
mosfet


TMD Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1TMD0507-2Power GaAs MMIC

Toshiba
Toshiba
data
2TMD0507-2AMicrowave Power GaAs MMIC

Toshiba
Toshiba
data
3TMD0708-2POWER GAAS MMIC

Toshiba Semiconductor
Toshiba Semiconductor
data
4TMD1013-1MICROWAVE POWER MMIC AMPLIFIER

Toshiba Semiconductor
Toshiba Semiconductor
amplifier
5TMD1013-1-431Microwave Power MMIC Amplifier

MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ „ High Power P1dB=33dBm(TYP.) High Power Added Efficiency ηadd=14%(TYP.) „ „ TMD1013-1-431 TMD1013-1-431 High Gain G1dB=25dB(TYP.) Operable Frequency : f=10.0-12.0GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25°C) CHARA
Toshiba
Toshiba
amplifier
6TMD1414-2CMICROWAVE POWER MMIC AMPLIFIER

MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA TMD1414-2C FEATURES n HIGH POWER P1dB=34.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN G1dB=26.0dB at 13.75GHz to 14.5GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS ( T
Toshiba Semiconductor
Toshiba Semiconductor
amplifier
7TMD16N25ZN-channel MOSFET

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK TMD16N25Z(G)/TMU16N25Z(G) BVDSS 250V N-channel MOSFET ID RDS(on) 16A <0.24W I-PAK Device TMD16N25Z / TMU16N25Z TMD16N25ZG / TMU16N25ZG
TRinno
TRinno
mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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