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PDF MT3S12FS Data sheet ( Hoja de datos )
| Número de pieza | MT3S12FS | |
| Descripción | Silicon NPN Epitaxial Planar Type Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MT3S12FS (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S12FS
VHF~UHF Band Low-Noise Amplifier Applications
VHF~UHF Band Oscillator Applications
MT3S12FS
Unit : mm
• Superior performance in oscillator applications
• Superior noise characteristics
:NF = 1.7 dB, |S21e|2 = 4.5 dB (f =2GHz)
1
3
2 0.8±0.05
1.0±0.05
0.1±0.05
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector- base voltage
Collector- emitter voltage
Emitter- base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC(Note)
Tj
Tstg
Rating
13
6
1.5
40
10
85
125
−55~125
Unit
V
V
V
mA
mW
mW
°C
°C
0.1±0.05
1.BASE
2.EMITTER
3.COLLECOTR
fSM
JEDEC
―
JEITA
―
TOSHIBA
2-1E1A
Weight: 0.0006g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: 10 mm2 × 1.0 mm (t), mounted on a glass-epoxy printed circuit board.
Marking
2
3 09
1
1 2007-11-01
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MT3S12FS.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MT3S12FS | Silicon NPN Epitaxial Planar Type Transistor | Toshiba Semiconductor |
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