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Número de pieza | MT3S113TU | |
Descripción | Silicon-Germanium NPN Epitaxial Planar Type Transistor | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MT3S113TU (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! MT3S113TU
TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type
MT3S113TU
VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications
FEATURES
• Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz)
• High Gain:|S21e|2=12.5dB(Typ.) (@ f=1GHz)
2.1±0.1
1.7±0.1
Unit: mm
1
23
Marking
3
R7
1.1. ベBーasスe
2.2. エEミmiッtteタr
3.3. コCレollクecタtor
12
Absolute Maximum Ratings (Ta = 25°C)
UFM
JEDEC
-
JEITA
-
TOSHIBA
2-2U1B
Weight : 6.6mg (typ.)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector-current
IC
Base-current
IB
Collector power dissipation
PC(Note1)
Junction temperature
Tj
Storage temperature range
Tstg
Note1:The device is mounted on a ceramic board
13 V
5.3 V
0.6 V
100 mA
10 mA
900 mW
150 °C
−55 to 150
°C
(25.4 mm x 25.4 mm x 0.8 mm (t))
Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2009-12-01
1 page IM3/Pout-Pin
30 f1=500MHz
20 f2=501MHz
10 VCE=3V
IC=50mA
0 Ta=25°C
-10
Pout
-20
IM3
-30
-40
-50
-60
-70
-50 -40 -30 -20 -10 0 10 20
Input level Pin(dBmW)
IM3/Pout-Pin
30 f1=500MHz
20 f2=501MHz
10 VCE=4V
IC=50mA
0 Ta=25°C
-10
Pout
-20
-30 IM3
-40
-50
-60
-70
-50 -40 -30 -20 -10 0 10 20
Input level Pin(dBmW)
IM3/Pout-Pin
30 f1=500MHz
20 f2=501MHz
10 VCE=5V
IC=50mA
0 Ta=25°C
-10
Pout
-20
-30 IM3
-40
-50
-60
-70
-50 -40 -30 -20 -10 0 10 20
Input level Pin(dBmW)
5
MT3S113TU
OIP3-IC
35 f1=500MHz
f2=501MHz
30 Pin=-15dBmW
VCE=3V
Ta=25°C
25
20
15
10
1
10 100
Collector-current IC(mA)
35 f1=500MHz
f 2=501MHz
30 Pin=-15dBmW
VCE=4V
Ta=25°C
25
OIP3-IC
20
15
10
1
10
100
Collector-current IC(mA)
40 f1=500MHz
f 2=501MHz
35 Pin=-15dBmW
VCE=5V
30 Ta=25°C
OIP3-IC
25
20
15
10
1
10
100
Collector-current IC(mA)
2009-12-01
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet MT3S113TU.PDF ] |
Número de pieza | Descripción | Fabricantes |
MT3S113TU | Silicon-Germanium NPN Epitaxial Planar Type Transistor | Toshiba Semiconductor |
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