|
|
MT3S113PのメーカーはToshiba Semiconductorです、この部品の機能は「Silicon-Germanium NPN Epitaxial Planar Type Transistor」です。 |
部品番号 | MT3S113P |
| |
部品説明 | Silicon-Germanium NPN Epitaxial Planar Type Transistor | ||
メーカ | Toshiba Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとMT3S113Pダウンロード(pdfファイル)リンクがあります。 Total 7 pages
TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type
MT3S113P
MT3S113P
VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications
Unit: mm
FEATURES
• Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz)
• High Gain:|S21e|2=10.5dB(Typ.) (@ f=1GHz)
Marking
R7
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Pw-Mini
JEDEC
-
JEITA
SC-62
TOSHIBA
2-5K1A
Weight : 0.05 g ( typ.)
Collector-emitter voltage
VCES
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Base current
IB
Collector power dissipation
PC(Note1)
Junction temperature
Tj
Storage temperature range
Tstg
Note1:The device is mounted on a ceramic board
13 V
5.3 V
0.6 V
100 mA
10 mA
1.6 W
150 °C
−55 to 150
°C
(25.4 mm x 25.4 mm x 0.8 mm (t))
Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2009-12-01
1 Page 1000
VCE=5V
hFE-IC
VCE=3V
100
IC-VBE
100 COMMON EMITTER
VCE=5V
10 Ta=25°C
MT3S113P
1
0.1
COMMON EMITTER
10 Ta=25°C
1 10
100
Collector-current IC(mA)
IC-VCE
COMMON EMITTER
100 Ta=25°C IB=520uA
90
80
70
60
50
40
30
20
10
0
0 12 3
4
440μA
360μA
280μA
200μA
120μA
40μA
56
Collector-emitter voltage VCE(V)
Cre,Cob-VCB
2.8
2.4 Cob
2
IE=0
f=1MHz
Ta=25°C
1.6 Cre
1.2
0.8
0.4
0
0.1 1 10
Collector-base voltage VCB(V)
3
0.01
0.001
0
0.2 0.4 0.6 0.8
Base-emitter voltage VBE(V)
10 VCE=5V
Ta=25°C
8
fT-IC
1
6
4
2
0
1 10
Collector-current IC(mA)
40 IC=50mA
Ta=25°C
|S21e|2-f
30
100
20
10
0
0.1
5V
3V
1
Frequency f (GHz)
10
2009-12-01
3Pages ⊿Pout-Pout
1
0.5
3V 4V 5V
0
-0.5
-1
-1.5 f=500MHz
IC=50m A
Ta=25°C
-2
-10
0
10 20
1800
1600
1400
1200
1000
800
600
400
200
0
0
Output level Pout(dBmW)
PC-Ta
The device is mounted on a ceramic-
board(25.4mm×25.4mm×0.8mm(t))
Device only
25 50 75 100 125 150
Ambient temperature Ta(°C)
MT3S113P
18
17
16
15
14
13
12
f=500MHz
11 IC=50mA
Ta=25°C
10
-30 -20
GP-Pin
-10
3V 4V 5V
0 10
Input level Pin(dBmW)
6 2009-12-01
6 Page | |||
ページ | 合計 : 7 ページ | ||
|
PDF ダウンロード | [ MT3S113P データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
MT3S113 | Silicon-Germanium NPN Epitaxial Planar Type Transistor | Toshiba Semiconductor |
MT3S113P | Silicon-Germanium NPN Epitaxial Planar Type Transistor | Toshiba Semiconductor |
MT3S113TU | Silicon-Germanium NPN Epitaxial Planar Type Transistor | Toshiba Semiconductor |