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MT3S113 の電気的特性と機能

MT3S113のメーカーはToshiba Semiconductorです、この部品の機能は「Silicon-Germanium NPN Epitaxial Planar Type Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 MT3S113
部品説明 Silicon-Germanium NPN Epitaxial Planar Type Transistor
メーカ Toshiba Semiconductor
ロゴ Toshiba Semiconductor ロゴ 




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MT3S113 Datasheet, MT3S113 PDF,ピン配置, 機能
TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type
MT3S113
MT3S113
VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications
Unit: mm
FEATURES
Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz)
High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz)
Marking
R7
1. Base
2. Emitter
3. Collector
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
S-Mini
JEDEC
TO-236
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Collector-emitter voltage
VCES
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector-current
IC
Base-current
IB
Collector power dissipation
PC(Note1)
Junction temperature
Tj
Storage temperature range
Tstg
Note1:The device is mounted on a ceramic board
13 V
5.3 V
0.6 V
100 mA
10 mA
800 mW
150 °C
55 to 150
°C
(25.4 mm x 25.4 mm x 0.8 mm (t))
Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2009-12-01

1 Page





MT3S113 pdf, ピン配列
1000
VCE=5V
hFE-IC
VCE=3V
100
COMMON EMITTER
10 Ta=25°C
1 10
100
Collector-current IC(mA)
IC-VCE
COMMON EMITTER
Ta=25°C
100
IB=520uA
90
80
70
440μA
360μA
280μA
60
200μA
50
40 120μA
30
20 40μA
10
0
0 12 34 56
Collector-emitter voltage VCE(V)
2.8
2.4
Cob
2
1.6 Cre
1.2
0.8
0.4
0
0.1
Cre,Cob-VCB
IE=0
f=1MHz
Ta=25°C
1 10
Collector-base voltage VCB(V)
3
MT3S113
IC-VBE
100 COMMON EMITTER
VCE=5V
10 Ta=25°C
1
0.1
0.01
0.001
0
0.2 0.4 0.6 0.8
Base-emitter voltage VBE(V)
18 VCE=5V
16 Ta=25°C
fT-IC
14
12
10
8
6
4
2
0
1 10
Collector-current IC(mA)
1
100
40 IC=50mA
Ta=25°C
30
|S21e|2-f
20
10
0
0.1
5V
3V
1
Frequency f (GHz)
10
2009-12-01


3Pages


MT3S113 電子部品, 半導体
Pout-Pout
1
0.5 3V 4V 5V
0
-0.5
-1
-1.5
f=500MHz
IC=50m A
Ta=25°C
-2
-10
0
10 20
900
800
700
600
500
400
300
200
100
0
0
Output level Pout(dBmW)
PC-Ta
The device is mounted on a ceramic-
board(25.4mm×25.4mm×0.8mm(t))
Device only
25 50 75 100 125 150
Ambient temperature Ta(°C)
MT3S113
GP-Pin
22
20
18
16
14
12 f=500MHz
IC=50m A
Ta=25°C
10
3V 4V 5V
-30 -20 -10 0 10
Input level Pin(dBmW)
6 2009-12-01

6 Page



ページ 合計 : 7 ページ
 
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[ MT3S113 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


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MT3S113

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Toshiba Semiconductor


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