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TMD4N60AZG の電気的特性と機能

TMD4N60AZGのメーカーはTRinnoです、この部品の機能は「N-channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 TMD4N60AZG
部品説明 N-channel MOSFET
メーカ TRinno
ロゴ TRinno ロゴ 




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TMD4N60AZG Datasheet, TMD4N60AZG PDF,ピン配置, 機能
Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
Improved ESD performance
D-PAK
TMD4N60AZ(G)/TMU4N60AZ(G)
BVDSS
600V
N-channel MOSFET
ID RDS(on)
4.0A
< 2.5W
I-PAK
Device
TMD4N60AZ / TMU4N60AZ
TMD4N60AZG / TMU4N60AZG
Package
D-PAK/I-PAK
D-PAK/I-PAK
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25
TC = 100
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25
Derate above 25
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMD4N60AZ / TMU4N60AZ
TMD4N60AZG / TMU4N60AZG
Remark
RoHS
Halogen Free
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMD4N60AZ(G)/TMU4N60AZ(G)
600
±30
4
2.34
16
192
4
8.62
86.2
0.68
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/
V/ns
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
TMD4N60AZ(G)/TMU4N60AZ(G)
1.45
110
October 2012 : Rev0
www.trinnotech.com
Unit
/W
/W
1/6

1 Page





TMD4N60AZG pdf, ピン配列
TMD4N60AZ(G)/TMU4N60AZ(G)
8
Top V =15.0V
GS
10.0V
9.0V
6 8.0V
7.0V
6.0V
Bottom 5.5V
4
2
1. T = 25
C
2. 250μs Pulse Test
0
0 5 10 15 20
Drain-Source Voltage, V [V]
DS
V = 30V
DS
250 μs Pulse Test
10
150
25
1
-55
0.1
2468
Gate-Source Voltage, V [V]
GS
10
4.0
T = 25
J
3.5
3.0
2.5
2.0
1.5
0
2
V = 10V
GS
V = 20V
GS
4
Drain Current,I [A]
D
6
8
20
V = 0V
GS
250μs Pulse Test
15
10
150
25
5
0
0.0 0.5 1.0 1.5
Source-Drain Voltage, V [V]
SD
2.0
1000
800
600
400
200
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
C
iss
V =0V
GS
f = 1 MHz
C
oss
C
rss
12
I = 4.0A
D
10
8
6
4
2
V = 300V
DS
V = 120V
DS
V = 480V
DS
0
10-1 100 101
Drain-Source Voltage, V [V]
DS
October 2012 : Rev0
0
0
www.trinnotech.com
4 8 12
Total Gate Charge, Q [nC]
G
16
3/6


3Pages


TMD4N60AZG 電子部品, 半導体
TMD4N60AZ(G)/TMU4N60AZ(G)
TO-251 (I-PAK) MECHANICAL DATA
October 2012 : Rev0
www.trinnotech.com
6/6

6 Page



ページ 合計 : 6 ページ
 
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[ TMD4N60AZG データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
TMD4N60AZ

N-channel MOSFET

TRinno
TRinno
TMD4N60AZG

N-channel MOSFET

TRinno
TRinno


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