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PDF TMP5N60AZG Data sheet ( Hoja de datos )

Número de pieza TMP5N60AZG
Descripción N-channel MOSFET
Fabricantes TRinno 
Logotipo TRinno Logotipo



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No Preview Available ! TMP5N60AZG Hoja de datos, Descripción, Manual

Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
Improved ESD performance
TMP5N60AZ(G)/TMPF5N60AZ(G)
BVDSS
600V
N-channel MOSFET
ID RDS(on)
4.2A
< 2.1W
Device
TMP5N60AZ / TMPF5N60AZ
TMP5N60AZG / TMPF5N60AZG
Package
TO-220 / TO-220F
TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25
TC = 100
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25
Derate above 25
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMP5N60AZ / TMPF5N60AZ
TMP5N60AZG / TMPF5N60AZG
Remark
RoHS
Halogen Free
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMP5N60AZ(G) TMPF5N60AZ(G)
600
±30
4.2 4.2 *
2.71 2.71 *
16.8 16.8 *
217
4.2
9.84
98.4 32.8
0.787
0.263
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/
V/ns
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
TMP5N60AZ(G)
1.27
62.5
October 2012 : Rev0
www.trinnotech.com
TMPF5N60AZ(G)
3.8
62.5
Unit
/W
/W
1/7

1 page




TMP5N60AZG pdf
TMP5N60AZ(G)/TMPF5N60AZ(G)
TMP5N60AZ(G)
100 Duty=0.5
0.2
0.1
10-1 0.05
0.02
0.01
10-2
single pulse
PDM
t
T
Duty = t/T
Z (t) = 1.27 /W Max.
thJC
10-5
10-4
10-3
10-2
10-1
100
101
Pulse Width, t [sec]
TMPF5N60AZ(G)
101
Duty=0.5
100 0.2
0.1
0.05
0.02
10-1
0.01
single pulse
10-2
PDM
t
T
Duty = t/T
Z (t) = 3.8 /W Max.
thJC
10-5
10-4
10-3
10-2
10-1
100
101
Pulse Width, t [sec]
October 2012 : Rev0
www.trinnotech.com
5/7

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