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TMPF10N60 の電気的特性と機能

TMPF10N60のメーカーはTRinnoです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 TMPF10N60
部品説明 Power MOSFET ( Transistor )
メーカ TRinno
ロゴ TRinno ロゴ 




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TMPF10N60 Datasheet, TMPF10N60 PDF,ピン配置, 機能
Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
TMP10N60/TMPF10N60
TMP10N60G/TMPF10N60G
VDSS = 660 V @Tjmax
ID = 10A
RDS(on) = 0.75 W(max) @ VGS= 10 V
D
G
S
Device
TMP10N60 / TMPF10N60
TMP10N60G / TMPF10N60G
Package
TO-220 / TO-220F
TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25
TC = 100
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25
Derate above 25
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMP10N60 / TMPF10N60
TMP10N60G / TMPF10N60G
Remark
RoHS
Halogen Free
Symbol
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMP10N60(G) TMPF10N60(G)
600
±30
10 10*
6.5 6.5*
40 40*
758
10
19.8
198 52
1.58 0.41
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/
V/ns
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
TMP10N60(G)
0.63
62.5
May 2010 : Rev1
www.trinnotech.com
TMPF10N60(G)
2.4
62.5
Unit
/W
/W
1/5

1 Page





TMPF10N60 pdf, ピン配列
TMP10N60/TMPF10N60
TMP10N60G/TMPF10N60G
35
Top V =15.0V
GS
30 10.0V
8.0V
7.0V
25 6.5V
6.0V
Bottom 5.0V
20
15
10
5
1. T = 25
C
2. 250μ s Pulse Test
0
0 10 20 30 40 50
Drain-Source Voltage, V [V]
DS
V = 30V
DS
250 μ s Pulse Test
10
150
25
1
-55
0.1
2468
Gate-Source Voltage, V [V]
GS
10
2.0
T = 25
J
1.5
1.0
0.5
V = 10V
GS
V = 20V
GS
0.0
0
5 10 15 20 25 30 35 40
Drain Current,I [A]
D
3500
3000
2500
2000
1500
1000
500
0
10-1
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
V =0V
GS
f = 1 MHz
C
iss
C
oss
C
rss
100 101
Drain-Source Voltage, V [V]
DS
30
V = 0V
GS
250μ s Pulse Test
25
20
15
10
5
150
25
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Source-Drain Voltage, V [V]
SD
12
I = 10A
D
10
8
6
V = 120V
DS
V = 300V
DS
V = 480V
DS
4
2
0
0 5 10 15 20 25 30 35 40 45
Total Gate Charge, Q [nC]
G
May 2010 : Rev1
www.trinnotech.com
3/5


3Pages





ページ 合計 : 5 ページ
 
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ダウンロード
[ TMPF10N60 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
TMPF10N60

Power MOSFET ( Transistor )

TRinno
TRinno
TMPF10N60A

N-channel MOSFET

TRinno
TRinno
TMPF10N60AG

N-channel MOSFET

TRinno
TRinno
TMPF10N60G

Power MOSFET ( Transistor )

TRinno
TRinno


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