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PDF UPA2730TP Data sheet ( Hoja de datos )
| Número de pieza | UPA2730TP | |
| Descripción | P-CHANNEL POWER MOSFET | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA2730TP
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The µPA2730TP which has a heat spreader is P-Channel
MOS Field Effect Transistor designed for power management
applications of notebook computers and Li-ion battery
protection circuit.
FEATURES
• Low on-state resistance
RDS(on)1 = 7.0 mΩ MAX. (VGS = –10 V, ID = –7.5 A)
RDS(on)2 = 10.5 mΩ MAX. (VGS = –4.5 V, ID = –7.5 A)
RDS(on)3 = 12.0 mΩ MAX. (VGS = –4.0 V, ID = –7.5 A)
• Low Ciss: Ciss = 4670 pF TYP.
• Small and surface mount package (Power HSOP8)
ORDERING INFORMATION
PART NUMBER
µPA2730TP
PACKAGE
Power HSOP8
PACKAGE DRAWING (Unit: mm)
85
1, 2, 3
; Source
4 ; Gate
5, 6, 7, 8, 9 ; Drain
14
5.2
+0.17
–0.2
0.8 ±0.2
S
6.0 ±0.3
4.4 ±0.15
1.27 TYP.
0.40
+0.10
–0.05
14
0.12 M
2.0 ±0.2
9
4.1 MAX.
85
0.10 S
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless otherwise noted, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
−30
V
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (DC) Note1
Drain Current (pulse) Note2
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) Note1
Channel Temperature
VGSS
ID(DC)1
ID(DC)2
ID(pulse)
PT1
PT2
Tch
m20
m42
m20
m120
40
3
150
V
A
A
A
W
W
°C
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg −55 to + 150 °C
IAS −15
A
EAS 22.5 mJ
Source
Notes 1. Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec
2. PW ≤ 10 µs, Duty Cycle ≤ 1%
3. Starting Tch = 25°C, VDD = –15 V, RG = 25 Ω, L = 100 µH, VGS = –20 → 0 V
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with NEC Electronics sales
representative for availability and additional information.
Document No. G15983EJ1V0DS00 (1st edition)
Date Published November 2002 NS CP(K)
Printed in Japan
2002
1 page  
µPA2730TP
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
15
ID = −7.5 A
Pulsed
VGS = -4.0 V
−4.5 V
10
−10 V
5
0
-50
0 50 100
Tch - Channel Temperature - °C
150
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
C iss
1000
100
C oss
C rss
VGS = 0 V
f = 1 MHz
10
- 0.01
- 0.1
-1
- 10
- 100
VDS - Drain to Source Voltage - V
1000
SWITCHING CHARACTERISTICS
td(off)
100
tf
tr
10
1
- 0.1
td(on)
VDD = −15 V
VGS = −10 V
RG = 10 Ω
- 1 - 10
ID - Drain Current - A
- 100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-30 -15
VDS
-20 VDD = −24 V
−15 V
−6 V
-10
VGS
-10
-5
00
0 20 40 60 80 100
QG - Gate Charge - nC
1000
100
10
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VGS = −10 V
Pulsed
0V
1
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2
VF(S-D) - Source to Drain Voltage - V
1.4
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1
1 10
IF - Diode Forword Current - A
100
Data Sheet G15983EJ1V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet UPA2730TP.PDF ] | |
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