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Datasheet 2N4340 PDF ( 特性, スペック, ピン接続図 )

部品番号 2N4340
部品説明 N-Channel JFETs
メーカ Vishay
ロゴ Vishay ロゴ 
プレビュー
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2N4340 Datasheet, 2N4340 PDF,ピン配置, 機能
2N4338/4339/4340/4341
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number
2N4338
2N4339
2N4340
2N4341
VGS(off) (V)
–0.3 to –1
–0.6 to –1.8
–1 to –3
–2 to –6
V(BR)GSS Min (V) gfs Min (mS)
–50 0.6
–50 0.8
–50 1.3
–50 2
IDSS Max (mA)
0.6
1.5
3.6
9
FEATURES
D Low Cutoff Voltage: 2N4338 <1 V
D High Input Impedance
D Very Low Noise
D High Gain: AV = 80 @ 20 mA
BENEFITS
D Full Performance from Low-Voltage
Power Supply: Down to 1 V
D Low Signal Loss/System Error
D High System Sensitivity
D High-Quality Low-Level Signal
Amplification
APPLICATIONS
D High-Gain, Low-Noise Amplifiers
D Low-Current, Low-Voltage
Battery-Powered Amplifiers
D Infrared Detector Amplifiers
D Ultrahigh Input Impedance
Pre-Amplifiers
DESCRIPTION
The 2N4338/4339/4340/4341 n-channel JFETs are designed
for sensitive amplifier stages at low- to mid-frequencies. Low
cut-off voltages accommodate low-level power supplies and
low leakage for improved system accuracy.
The TO-206AA (TO-18) package is hermetically sealed and
suitable for military processing (see Military Information). For
similar products in TO-226AA (TO-92) and TO-236 (SOT-23)
packages, see the J/SST201 series data sheet.
TO-206AA
(TO-18)
S
1
2
D
3
Top View
G and Case
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 V
Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 175_C
For applications information see AN102 and AN106.
Document Number: 70240
S-04028—Rev. E, 04-Jun-01
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
Notes
a. Derate 2 mW/_C above 25_C
www.vishay.com
7-1

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2N4340 pdf, ピン配列
2N4338/4339/4340/4341
Vishay Siliconix
SPECIFICATIONS FOR 2N4340 AND 2N4341 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N4340
2N4341
Parameter
Symbol
Test Conditions
Typa Min Max Min Max
Unit
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Drain-Source On-Resistance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
gfs
gos
rds(on)
Ciss
Crss
VDS = 15 V, VGS = 0 V, f = 1 kHz
VDS = 0 V, VGS = 0 V, f = 1 kHz
VDS = 15 V, VGS = 0 V, f = 1 MHz
Equivalent Input Noise Voltagec
en VDS = 10 V, VGS = 0 V, f = 1 kHz
Noise Figure
NF
VDS = 15 V, VGS = 0 V
f = 1 kHz, RG = 1 MW
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms, duty cycle v3%.
c. This parameter not registered with JEDEC.
1.3 3
2
30
1500
57
1.5 3
6
1
4 mS
60 mS
800 W
7
pF
3
nV
Hz
1 dB
NPA
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
10
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
8 f = 1 kHz
5
4
10 nA
1 nA
Gate Leakage Current
TA = 125_C
ID = 100 mA
500 mA
6
gfs
4
IDSS
3
2
21
0
0
1 2 3 4
VGS(off) Gate-Source Cutoff Voltage (V)
0
5
100 pA
10 pA
1 pA
TA = 25_C
IGSS @ 125_C
500 mA
ID = 100 mA
IGSS @ 25_C
0.1 pA
0
6 12 18 24
VDG Drain-Gate Voltage (V)
30
Document Number: 70240
S-04028Rev. E, 04-Jun-01
www.vishay.com
7-3


3Pages


2N4340 電子部品, 半導体
2N4338/4339/4340/4341
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Source Input Capacitance
vs. Gate-Source Voltage
10
f = 1 MHz
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
5
f = 1 MHz
84
6
VDS = 0 V
4
10 V
2
0
0 4 8 12 16 20
VGS Gate-Source Voltage (V)
Output Conductance vs. Drain Current
3
VGS(off) = 1.5 V
VDS = 10 V
f = 1 kHz
2.4
1.8
0.8
0.4
0
0.01
TA = 55_C
25_C
125_C
0.1
ID Drain Current (mA)
1
3
VDS = 0 V
2
1 10 V
0
0 4 8 12 16 20
VGS Gate-Source Voltage (V)
Equivalent Input Noise Voltage vs. Frequency
20
VDS = 10 V
16
12 ID = 100 mA
8
ID = IDSS
4
0
10
100 1 k 10 k
f Frequency (Hz)
100 k
www.vishay.com
7-6
Document Number: 70240
S-04028Rev. E, 04-Jun-01

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