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IRFD320 の電気的特性と機能

IRFD320のメーカーはVishayです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFD320
部品説明 Power MOSFET ( Transistor )
メーカ Vishay
ロゴ Vishay ロゴ 




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IRFD320 Datasheet, IRFD320 PDF,ピン配置, 機能
www.vishay.com
IRFD320, SiHFD320
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
400
VGS = 10 V
20
3.3
11
Single
1.8
D
HVMDIP
S
G
D
G
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt rating
• Repetitive avalanche rated
• For automatic insertion
RoHS
COMPLIANT
• End stackable
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertiable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain servers as a
thermal link to the mounting surface for power dissipation
levels up to 1 W.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
HVMDIP
IRFD320PbF
SiHFD320-E3
IRFD320
SiHFD320
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current a
Linear Derating Factor
Single Pulse Avalanche Energy b
Avalanche Current a
Repetitive Avalanche Energy a
Maximum Power Dissipation
Peak Diode Recovery dV/dt c
VGS at 10 V
TA = 25 °C
TA = 100 °C
TA = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 21 mH, Rg = 25 Ω, IAS = 2.0 A (see fig. 12).
c. ISD 2.0 A, dI/dt 40 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
400
± 20
0.49
0.31
3.9
0.0083
48
0.49
0.10
1.0
4.0
-55 to +150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S14-2355-Rev. D, 08-Dec-14
1
Document Number: 91134
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





IRFD320 pdf, ピン配列
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFD320, SiHFD320
Vishay Siliconix
10
TJ = 25 °C
TJ = 150 °C
1
TA = 25 °C
Fig. 1 - Typical Output Characteristics, TA = 25 °C
0.1
0.01
4
VDS = 26.2V
56789
VGS, Gate-to-Source Voltage (V)
10
Fig. 3 - Typical Transfer Characteristics
TA = 150 °C
Fig. 2 - Typical Output Characteristics, TA = 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
S14-2355-Rev. D, 08-Dec-14
3
Document Number: 91134
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


IRFD320 電子部品, 半導体
www.vishay.com
VDS
Vary tp to obtain
required IAS
Rg
10 V
tp
L
D.U.T.
IAS
0.01 W
+
- V DD
Fig. 12a - Unclamped Inductive Test Circuit
IRFD320, SiHFD320
Vishay Siliconix
VDS
VDS
tp
VDD
IAS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
10 V
QGS
VG
QG
QGD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
S14-2355-Rev. D, 08-Dec-14
6
Document Number: 91134
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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共有リンク

Link :


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IRFD320

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Vishay


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