|
|
C5812のメーカーはHitachi Semiconductorです、この部品の機能は「NPN Transistor - 2SC5812」です。 |
部品番号 | C5812 |
| |
部品説明 | NPN Transistor - 2SC5812 | ||
メーカ | Hitachi Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとC5812ダウンロード(pdfファイル)リンクがあります。 Total 10 pages
2SC5812
Silicon NPN Epitaxial
VHF/UHF wide band amplifier
ADE-208-1468(Z)
Rev.0
Nov. 2001
Features
• High power gain, Low noise figure at low power operation:
|S21|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)
Outline
MFPAK
Note: Marking is “WG–“.
3
1
2
1. Emitter
2. Base
3. Collector
1 Page Collector Power Dissipation Curve
100
80
60
40
20
0 50 100 150 200 250
Ambient Temperature Ta (˚C)
2SC5812
Typical Output Characteristics
20
160 µA
140 µA
15 120 µA
100 µA
80 µA
10
60 µA
40 µA
5
IB = 20 µA
0 1 2 34
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
25
VCE = 1 V
20
15
10
5
0 0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage VBE (V)
DC Current Transfer Ratio vs.
Collector Current
200
VCE = 1 V
100
0
0.1 1.0 10 100
Collector Current IC (mA)
Rev.0, Nov. 2001, page 3 of 10
3Pages 2SC5812
S11 Parameter vs. Frequency
.8 1
.6
.4
.2
1.5
2
3
4
5
10
0 .2 .4 .6 .8 1 1.5 2 3 4 5
–10
–.2
–.4
–.6
–.8 –1
–5
–4
–3
–2
–1.5
Test conditions: VCE = 1 V , ZO = 50 Ω
100 to 2000 MHz (100 MHz step)
(IC = 5 mA)
(IC = 20 mA)
S21 Parameter vs. Frequency
90° Scale: 8 / div.
120°
60°
150°
30°
180°
0°
–150°
–30°
–120°
–90°
–60°
Test conditions: VCE = 1 V , ZO = 50 Ω
100 to 2000 MHz (100 MHz step)
(IC = 5 mA)
(IC = 20 mA)
S12 Parameter vs. Frequency
90° Scale: 0.04 / div.
120°
60°
150°
30°
180°
0°
–150°
–30°
–120°
–90°
–60°
Test conditions: VCE = 1 V , ZO = 50 Ω
100 to 2000 MHz (100 MHz step)
(IC = 5 mA)
(IC = 20 mA)
S22 Parameter vs. Frequency
.8 1
.6
.4
.2
1.5
2
3
4
5
10
0 .2 .4 .6 .8 1 1.5 2 3 4 5
–10
–.2
–.4
–.6
–.8 –1
–5
–4
–3
–2
–1.5
Test conditions: VCE = 1 V , ZO = 50 Ω
100 to 2000 MHz (100 MHz step)
(IC = 5 mA)
(IC = 20 mA)
Rev.0, Nov. 2001, page 6 of 10
6 Page | |||
ページ | 合計 : 10 ページ | ||
|
PDF ダウンロード | [ C5812 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
C5811 | NPN Transistor - 2SC5811 | Sanyo Semicon Device |
C5812 | NPN Transistor - 2SC5812 | Hitachi Semiconductor |
C5819 | NPN Transistor - 2SC5819 | Toshiba Semiconductor |