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PDF IS65WV102416EBLL Data sheet ( Hoja de datos )
| Número de pieza | IS65WV102416EBLL | |
| Descripción | ULTRA LOW POWER CMOS STATIC RAM | |
| Fabricantes | ISSI | |
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IS62/65WV102416EALL
IS62/65WV102416EBLL
1Mx16 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
JANUARY 2015
KEY FEATURES
High-speed access time: 45ns, 55ns
CMOS low power operation
– 30 mW (typical) operating
– 12 µW (typical) CMOS standby
TTL compatible interface levels
Single power supply
–1.65V—1.98V Vdd (62/65WV102416EALL)
– 2.2V--3.6V Vdd (62/65WV102416EBLL)
Data control for upper and lower bytes
Industrial and Automotive temperature support
BLOCK DIAGRAM
DESCRIPTION
The IS62WV102416EALL/BLL and
IS65WV102416EALL/BLL are Low Power, 16M bit
static RAMs organized as 1024K words by 16bits. It is
fabricated using 's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-
performance and low power consumption devices.
When is HIGH (deselected) or when CS2 is low
(deselected) or when is low , CS2 is high and both
and are HIGH, the device assumes a standby
mode at which the power dissipation can be reduced
down with CMOS input levels.
Easy memory expansion is provided by using Chip
Enable and Output Enable inputs. The active LOW
Write Enable
controls both writing and reading of
the memory. A data byte allows Upper Byte
and
Lower Byte ( access.
The IS62WV102416EALL/BLL and
IS65WV102416EALL/BLL are packaged in the JEDEC
standard 48-pin BGA (6mm x 8mm).
Copyright © 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such
applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A
12/12/2014
1
1 page  
IS62/65WV102416EALL
IS62/65WV102416EBLL
ELECTRICAL CHARACTERISTICS
IS62(5)WV102416EALL DC ELECTRICAL CHARACTERISTICS-I (OVER THE OPERATING RANGE)
Symbol
VOH
VOL
VIH(1)
VIL(1)
ILI
ILO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Test Conditions
IOH = -0.1 mA
IOL = 0.1 mA
GND < VIN < VDD
GND < VIN < VDD, Output Disabled
Min.
1.4
—
1.4
–0.2
–1
–1
Max.
—
0.2
VDD + 0.2
0.4
1
1
Unit
V
V
V
V
µA
µA
Notes:
1. VILL(min) = -1.0V AC (pulse width < 10ns). Not 100% tested.
VIHH (max) = VDD + 1.0V AC (pulse width < 10ns). Not 100% tested.
IS62(5)WV102416EBLL DC ELECTRICAL CHARACTERISTICS-I (OVER THE OPERATING RANGE)
Symbol
VOH
Parameter
Output HIGH Voltage
VOL
VIH(1)
VIL(1)
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
ILI Input Leakage
ILO Output Leakage
Test Conditions
2.2 ≤ VDD < 2.7, IOH = -0.1 mA
2.7 ≤ VDD ≤ 3.6, IOH = -1.0 mA
2.2 ≤ VDD < 2.7, IOL = 0.1 mA
2.7 ≤ VDD ≤ 3.6, IOL = 2.1 mA
2.2 ≤ VDD < 2.7
2.7 ≤ VDD ≤ 3.6
2.2 ≤ VDD < 2.7
2.7 ≤ VDD ≤ 3.6
GND < VIN < VDD
GND < VIN < VDD, Output Disabled
Min.
2.0
2.4
—
—
1.8
2.2
–0.3
–0.3
–1
–1
Max.
—
—
0.4
0.4
VDD + 0.3
VDD + 0.3
0.6
0.8
1
1
Unit
V
V
V
V
V
V
V
V
µA
µA
Notes:
1. VILL(min) = -2.0V AC (pulse width < 10ns). Not 100% tested.
VIHH (max) = VDD + 2.0V AC (pulse width < 10ns). Not 100% tested.
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A
12/12/2014
5
5 Page 
IS62/65WV102416EALL
IS62/65WV102416EBLL
WRITE CYCLE NO. 3 (
ADDRESS
CONTROLLED:
IS LOW DURING WRITE CYCLE)
tWC
LOW
tSCS1
tHA
tSCS2
CS2
tAW
tPWE
tPWB
DOUT
DIN
tSA tHZWE
DATA UNDEFINED(1)
DATA UNDEFINED(1)
HIGH-Z
tSD
tLZWE
tHD
DATA VALID
Notes:
1. If is low during write cycle, tHZWE must be met in the application. Do not apply input signal during this period. Data output from the previous
READ operation will drive IO BUS.
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A
12/12/2014
11
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet IS65WV102416EBLL.PDF ] | |
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